SE1003 Todos los transistores

 

SE1003 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SE1003

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 24 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: SOT23

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SE1003 datasheet

 ..1. Size:576K  cn sino-ic
se1003.pdf pdf_icon

SE1003

SE1003 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 100V DS Voltage and Current Improved Shoot-Through R = 230m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations

 0.1. Size:420K  cn sino-ic
se10030a.pdf pdf_icon

SE1003

SE10030A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =100V DS Voltage and Current Improved Shoot-Through R =25m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations

 9.1. Size:624K  cn sino-ic
se10080a.pdf pdf_icon

SE1003

SE10080A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =100V DS Voltage and Current Improved Shoot-Through R =9.9m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations

 9.2. Size:358K  cn sino-ic
se100p60.pdf pdf_icon

SE1003

SE100P60 P-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = -100V DS low operation voltage. This device is R =18m @V =-10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

Otros transistores... MT7N65-220F , SE01P13K , SE100130A , SE100130GA , SE10015 , SE100150G , SE100180GA , SE100250GTS , IRFB3607 , SE10030A , SE10060A , SE10080A , SE100P60 , SE120120G , SE12060GA , SE1216 , SE12N50FRA .

 

 

 

 

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