SE10060A Todos los transistores

 

SE10060A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SE10060A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 94 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO220
 

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SE10060A Datasheet (PDF)

 ..1. Size:508K  cn sino-ic
 se10060a.pdf pdf_icon

SE10060A

SE10060AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =14m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

 9.1. Size:624K  cn sino-ic
 se10080a.pdf pdf_icon

SE10060A

SE10080AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =100VDSVoltage and Current Improved Shoot-Through R =9.9m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

 9.2. Size:358K  cn sino-ic
 se100p60.pdf pdf_icon

SE10060A

SE100P60P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V = -100VDSlow operation voltage. This device is R =18m @V =-10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline

 9.3. Size:470K  cn sino-ic
 se100150g.pdf pdf_icon

SE10060A

SE100150GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =100VDSoperation voltage. This device is suitable for R =3.5m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

MOSTRAR MÁS

Otros transistores... SE100130A , SE100130GA , SE10015 , SE100150G , SE100180GA , SE100250GTS , SE1003 , SE10030A , AO4407 , SE10080A , SE100P60 , SE120120G , SE12060GA , SE1216 , SE12N50FRA , SE12N65 , SE138U .

History: WST8205 | SFG100N08KF | MTP10N25

 

 
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