SE2102M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SE2102M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.17 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 1.4 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: SOT723

Búsqueda de reemplazo de MOSFET SE2102M

SE2102M Datasheet (PDF)

..1. Size:381K cn sino-ic
se2102m.pdf

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE2102M Small Signal MOSFET 20 V, 600 mA, Single N-Channel MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS (V) = 20V best combination of fast switching, low ID = 600mA on-resistance and cost-effectiveness. RDS(ON)

9.1. Size:42K fairchild semi
kse210.pdf

KSE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to KSE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

9.2. Size:53K samsung
kse210.pdf

KSE210 PNP EPITAXIAL SILICON TRANSISTORCOLLECTOR-EMITTER SUSTAINING VOLTAGELOW COLLECTOR-EMITTER SATURATIONTO-126SATURATION VOLTAGEHIGH CURRENT GAIN-BANDWIDTHPRODUCT-MIN fT=65 I = -100CComplement to KSE200ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter- Base Voltage VEBO -8 V Co

9.3. Size:170K cn sino-ic
se2101.pdf

Jul 2015 SE2101 P-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type is P-Channel enhancement mode For a single MOSFET power MOSFET which is produced with high VDS = -20V cell density and DMOS trench technology. This ID= -0.9A device particularly suits low voltage RDS(ON) = 280m @ VGS=-4.5V applications, especially for batter

9.4. Size:219K cn sino-ic
se2101e.pdf

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2101E P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2101E is P-Channel enhancement mode power MOSFET which is produced with high VDS -20V, VGS 8V, ID -0.8A RDSon@-4.5V,

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: