SE30100B Todos los transistores

 ..1. Size:535K  cn sino-ic
 se30100b.pdf

Jan 2015 SE30100B N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =30V DS charge. R =3m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations

 9.1. Size:676K  cn sino-ic
 se30150.pdf

SE30150 N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =30V DS low operation voltage. This device is R =2.3m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline

 9.2. Size:371K  cn sino-ic
 se30150b.pdf

Dec 2014 SE30150B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =1.6m @V =10 @I =30A DS(ON) GS DS FOM R =2.1m @V =4.5 @I =25A DS(ON) GS DS Simple Drive Requirement Sma

 9.3. Size:334K  cn sino-ic
 se30150a.pdf

Dec 2014 SE30150A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =2.1m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin config

 9.4. Size:563K  cn sino-ic
 se3018.pdf

Apr 2015 SE3018 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 50V DS Voltage and Current Improved Shoot-Through R = 2.3 @ V =4.5 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device