FCB20N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCB20N60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET FCB20N60F

FCB20N60F Datasheet (PDF)

..1. Size:354K fairchild semi
fcb20n60f f085.pdf

December 2013FCB20N60F_F085N-Channel MOSFET600V, 20A, 190m DDFeatures Typ rDS(on) = 171m at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpack

..2. Size:1152K fairchild semi
fcb20n60f.pdf

December 2008 TMSuperFETFCB20N60F600V N-CHANNEL FRFETFeatures Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

..3. Size:486K onsemi
fcb20n60f.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:1144K fairchild semi
fcb20n60ftm.pdf

6.1. Size:363K fairchild semi
fcb20n60 f085.pdf

November 2013FCB20N60_F085N-Channel MOSFET600V, 20A, 198m DDFeatures Typ rDS(on) = 173m at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20AG UIS Capability RoHS CompliantG Qualified to AEC Q101 SSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurrentpacka

6.2. Size:956K fairchild semi
fcb20n60tm.pdf

December 2008 TMSuperFETFCB20N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance.

6.3. Size:964K fairchild semi
fcb20n60.pdf