APM2324AA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APM2324AA
Código: 224*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.83 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 4.4 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET APM2324AA
APM2324AA Datasheet (PDF)
apm2324aa.pdf
APM2324AAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/3A,DRDS(ON)= 50m(Typ.) @ VGS= 4.5VSRDS(ON)= 65m(Typ.) @ VGS= 2.5VGRDS(ON)= 120m(Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available(RoHS Compliant)DGApplications Power Management in Notebook Computer,Portable Equipment and Ba
apm2324a.pdf
APM2324AN-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m(MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m(MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power
apm2323aac.pdf
APM2323AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
apm2321ac.pdf
APM2321ACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO
apm2321aac.pdf
APM2321AACwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: APQ02SN60AB
