SM3429BSQA Todos los transistores

SM3429BSQA Dual P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-19A* D2 D2 D1 D1 RDS(ON)=29m (max.)@VGS=-4.5V RDS(ON)=40m (max.)@VGS=-2.5V G2 Pin 1 S2 RDS(ON)=60m (max.)@VGS=-1.8V G1 S1 100% UIS + Rg Tested DFN3.3x3.3G-8_EP2 Reliable and Rugged Lead Free and Green Devices Available (8) (7) (6) (5) D1 D1 D2 D2 (RoHS Compliant) (2) (4) A

TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition PRODUCT SUMMARY 1. Drain 6. Drain 2. Drain 5, Drain VDS (V) RDS(on)(m ) ID (A) 3. Gate 4. Source 30 @ VGS = 10V 6.7 30 42 @ VGS = 4.5V 5.7 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin

SM3425NHQA N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/25A, RDS(ON) = 5.2m (max.) @ VGS =10V G S S RDS(ON) = 8.3m (max.) @ VGS =4.5V S ESD protection DFN3.3x3.3A-8_EP Lower Qg and Qgd for high-speed switching Lead Free and Green Devices Available (5,6,7,8) DDDD (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,

SM3424NHQA N-Channel Enhancement Mode MOSFET Features Pin Description D 30V/77A, D D D RDS(ON)= 3.4m (Max.) @ VGS=10V RDS(ON)= 5.1m (Max.) @ VGS=4.5V G S S S Lower Qg and Qgd for high-speed switching Lower RDS(ON) to Minimize Conduction Losses DFN3.3x3.3A-8_EP ESD Protection (5,6,7,8) 100% UIS + Rg Tested DDDD Reliable and Rugged Lead Free and Green Devices Av

GSM3426 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V Super high density cell design for extremely These devices are partic

GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m @VGS=4.5V Super high density cell design for extremely These devices are

GSM3425 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m @VGS=2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=1.8V Super high density cell design for extremely These devices are

GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m @VGS=2.5V Super high density cell design for extremely These devices are pa

JSM3420 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23-3 0.024 @ 10V 3 1.GATE 20V 6.0A 0.027 @ 4.5V 2.SOURCE 3.DRAIN 1 0.035 @ 2.5V 2 General FEATURE Equivalent Circuit MARKING TrenchFET Power MOSFET Lead free product is acquired Surface mount package APPLICATION Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25 unless

JSM3420S N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.024 @ 10V 3 1.GATE 20V 6.0A 0.027 @ 4.5V 2.SOURCE 3.DRAIN 1 0.035 @ 2.5V 2 General FEATURE Equivalent Circuit MARKING TrenchFET Power MOSFET Lead free product is acquired Surface mount package APPLICATION Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25 unless o