SM4500NHKP Todos los transistores

 ..1. Size:266K  sino
 sm4500nhkp.pdf

SM4500NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/100A, D D D RDS(ON)=1.1m (Max.) @ VGS=10V D RDS(ON)=1.7m (Max.) @ VGS=4.5V 100% UIS + Rg Tested G Pin 1 S S S Reliable and Rugged DFN5x6A-8_EP Lower Qg and Qgd for high-speed switching (5,6,7,8) Lower RDS(ON) to Minimize Conduction Losses DDDD Lead Free and Green Devices Available (RoHS

 8.1. Size:209K  silicon standard
 ssm4500gm.pdf

SSM4500GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 20V D2 D2 Simple Drive Requirement RDS(ON) 30m D1 D1 Low On-resistance ID 6A Fast Switching G2 P-CH BVDSS -20V S2 G1 SO-8 S1 RDS(ON) 50m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, rug

 9.1. Size:266K  sino
 sm4508nhkp.pdf

SM4508NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/48A, D D D RDS(ON)=6.8m (Max.) @ VGS=10V D RDS(ON)=11m (Max.) @ VGS=4.5V Lower Qg and Qgd for high-speed switching G Pin 1 S S S Lower RDS(ON) to Minimize Conduction Losses DFN5x6A-8_EP 100% UIS + Rg Tested (5,6,7,8) ESD protection DDDD Reliable and Rugged Lead Free and Green Devices Av

 9.2. Size:207K  sino
 sm4503nhkp.pdf

SM4503NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/80A, D D D RDS(ON)= 3m (Max.) @ VGS=10V D RDS(ON)= 5.1m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) Lead Free and Green Devices Available DDDD (RoHS Compliant) Applic

 9.3. Size:207K  sino
 sm4506nhkp.pdf

SM4506NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/67A, D D D RDS(ON)=4.8m (Max.) @ VGS=10V D RDS(ON)=7.6m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) Lead Free and Green Devices Available DDDD (RoHS Compliant) ESD pr

 9.4. Size:263K  sino
 sm4501psk.pdf

SM4501PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D D -20V/-12.2A, D RDS(ON) = 14m (max.) @ VGS =-4.5V RDS(ON) = 20m (max.) @ VGS =-2.5V S S RDS(ON) = 32m (max.) @ VGS =-1.8V S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) D D D D (4) Applications G Power Management in Notebook Compu

 9.5. Size:208K  sino
 sm4507nhkp.pdf

SM4507NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, D D D RDS(ON)= 5.5m (Max.) @ VGS=10V D RDS(ON)= 8.7m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) Lead Free and Green Devices Available DDDD (RoHS Compliant) ESD

 9.6. Size:208K  sino
 sm4502nhkp.pdf

SM4502NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/100A, D D D RDS(ON)= 2m (Max.) @ VGS=10V D RDS(ON)= 3.2m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) Lead Free and Green Devices Available DDDD (RoHS Compliant) 100

 9.7. Size:300K  sino
 sm4504nhkp.pdf

SM4504NHKP N-Channel Enhancement Mode MOSFET Features Pin Description 30V/70A, D D D RDS(ON)=4m (Max.) @ VGS=10V D RDS(ON)=6.2m (Max.) @ VGS=4.5V Reliable and Rugged G Pin 1 S S S Lower Qg and Qgd for high-speed switching DFN5x6-8 Lower RDS(ON) to Minimize Conduction Losses (5,6,7,8) Lead Free and Green Devices Available DDDD (RoHS Compliant) Applications (4)

 9.8. Size:305K  silicon standard
 ssm4502gm.pdf

SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 N-CH BVDSS 20V D2 Simple Drive Requirement D1 RDS(ON) 18m D1 Low Gate Charge ID 8.3A Fast Switching Performance G2 S2 P-CH BVDSS -20V G1 S1 SO-8 RDS(ON) 45m DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switchin

 9.9. Size:293K  silicon standard
 ssm4501gm.pdf

SSM4501GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 Simple Drive Requirement D2 RDS(ON) 28m D1 Low On-resistance D1 ID 7A Fast Switching G2 P-CH BVDSS -30V S2 G1 SO-8 RDS(ON) 50m S1 DESCRIPTION ID -5.3A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching,

 9.10. Size:249K  silicon standard
 ssm4501gsd.pdf

SSM4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 D1 RDS(ON) 27m Simple Drive Requirement D1 Low On-resistance ID 7A Fast Switching Characteristic P-CH BVDSS -30V G2 S2 RDS(ON) 49m PDIP-8 G1 S1 DESCRIPTION ID -5A The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of

 9.11. Size:425K  silicon standard
 ssm4509m.pdf

SSM4509GM N- AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS N-CH BVDSS 30V Simple drive requirement D2 D2 D2 RDS(ON) 14m Low on-resistance D1 D1 D1 D1 ID 10A Fast switching characteristic G2 G2 P-CH BVDSS -30V S2 S2 G1 SO-8 S1G1 RDS(ON) 20m S1 Description ID -8.4A Advanced Power MOSFETs from Silicon Standard provide the D2 D1 designer with the best combination

 9.12. Size:232K  silicon standard
 ssm4507gm.pdf

SSM4507GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS 30V D2 D2 Simple Drive Requirement D2 RDS(ON) 36m D2 D1 D1 Low On-resistance D1 D1 ID 6.0A Fast Switching Performance G2 G2 P-CH BVDSS -30V S2 G1 S2 SO-8 S1 G1 RDS(ON) 72m SO-8 S1 DESCRIPTION ID -4.2A The advanced power MOSFETs from Silicon Standard Corp. provide the designer w