VS3620GPMC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS3620GPMC
   Código: 3620GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: PDFN5X6

Búsqueda de reemplazo de MOSFET VS3620GPMC

VS3620GPMC Datasheet (PDF)

..1. Size:2373K cn vanguard
vs3620gpmc.pdf

VS3620GPMC30V/36A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.1 m VitoMOS TechnologyI D(Silicon Limited) 60 A Fast Switching and High efficiencyI D(Package Limited) 36 A 100% Avalanche testPDFN5x6Part ID Package Type Marking PackingVS3620GPMC PDFN5x6 3620GP 3000PCS/Reel

..2. Size:1094K cn vgsemi
vs3620gpmc.pdf

7.1. Size:973K cn vgsemi
vs3620ga.pdf

VS3620GA30V/23A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.7 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.8 m VitoMOS TechnologyI D(Silicon Limited) 55 A Fast Switching and High efficiencyI D(Package Limited) 23 A 100% Avalanche testDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3620GA DFN2x2x0.75-6L 3620 3000

7.2. Size:1093K cn vgsemi
vs3620gemc.pdf

VS3620GEMC30V/40A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.9 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8 m Very low on-resistanceI D(Silicon Limited) 60 A VitoMOS TechnologyI D(Package Limited) 40 A Fast Switching and High efficiencyPDFN3333 100% Avalanche testPart ID Package Type Marking PackingVS3620GEMC

8.1. Size:983K cn vgsemi
vs3620dp-g.pdf

VS3620DP-G30V/36A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 4.9 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 7.3 m Enhancement modeI D(Silicon Limited) 56 A Very low on-resistanceI D(Package Limited) 36 A VitoMOS TechnologyPDFN5x6 Dual Fast Switching and High efficiency 100% Avalanche Tested,100% Rg TestedPar

8.2. Size:1036K cn vgsemi
vs3620de-g.pdf

VS3620DE-G30V/18A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 9 m VitoMOS TechnologyI D(Silicon Limited) 37 A Fast Switching and High efficiencyI D(Package Limited) 18 A 100% Avalanche TestedPDFN3333 DualPart ID Package Type Marking PackingVS3620DE-G PDFN3333 Dual 36

8.3. Size:1033K cn vgsemi
vs3620dp2-g.pdf

VS3620DP2-G30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.6 4.6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 7.6 7.6 m Very low on-resistanceI D(Wire bond Limited) 45 45 A VitoMOS Technology 100% Avalanche Tested,100% Rg TestedPDFN5x6 Dual Opt2 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimiz

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: