VSP007N07MS Todos los transistores

 

VSP007N07MS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VSP007N07MS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PDFN5X6

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VSP007N07MS datasheet

 ..1. Size:779K  cn vanguard
vsp007n07ms.pdf pdf_icon

VSP007N07MS

VSP007N07MS 80V/65A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 65 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I

 6.1. Size:978K  cn vgsemi
vsp007n04ms-g.pdf pdf_icon

VSP007N07MS

VSP007N04MS-G 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 3.4 m Enhancement mode R DS(on),TYP@ VGS=4.5V 5.1 m Very Low on-resistance RDS(on) I D 80 A VitoMOS Technology PDFN5x6 100% Avalanche test Tape and reel Part ID Package Type Marking information VSP007N04MS-G PDFN5x6 007N04M 3000PCS/Reel Maximum ratings, at

 8.1. Size:327K  cn vanguard
vsp007p06ms.pdf pdf_icon

VSP007N07MS

VSP007P06MS -60V/-80A P-Channel Advanced Power MOSFET Features V DS -60 V R DS(on),TYP@ VGS=-10 V 8.0 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 10.0 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -80 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Ty

 9.1. Size:715K  cn vanguard
vsp008n10msc.pdf pdf_icon

VSP007N07MS

VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6.2 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.7 m Enhancement mode I D 85 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Pa

Otros transistores... VSI013N08MS , VSI080N06MS , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC , IRF1407 , VSP007P06MS , VSP008N10MSC , VSP020P06MS , VST007N07MS , VST012N06MS , VST018N10MS , 2SK2897-01 , 2SK2907-01 .

History: SWP8N65D | J330 | MTP36N06V | JMSL1040AUQ | LSB60R092GT | AS2102W | VST007N07MS

 

 

 

 

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