2SK2908-01L Todos los transistores

 

2SK2908-01L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2908-01L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220AB

 Búsqueda de reemplazo de MOSFET 2SK2908-01L

 

2SK2908-01L Datasheet (PDF)

 ..1. Size:358K  1
2sk2908-01l 2sk2908-01s.pdf

2SK2908-01L
2SK2908-01L

2SK2908-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIS SERIESOutline DrawingsFeaturesHigh speed switching T-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25

 ..2. Size:283K  inchange semiconductor
2sk2908-01l.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2908-01LFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 4.1. Size:357K  inchange semiconductor
2sk2908-01s.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2908-01SFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.1. Size:220K  sanyo
2sk2909.pdf

2SK2908-01L
2SK2908-01L

Ordering number:ENN6312N-Channel Silicon MOSFET2SK2909Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A 2.5V drive.[2SK2909]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

 8.2. Size:110K  fuji
2sk2900-01.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2900-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

 8.3. Size:115K  fuji
2sk2906-01.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2906-01N-CHANNEL SILICON POWER MOS-FET FeaturesTO-3PHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. SourceEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless ot

 8.4. Size:97K  fuji
2sk2907-01r.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2907-01RN-CHANNEL SILICON POWER MOS-FETTO-3PF Features5.5 0.3 0.3 0.215.5High speed switching 3.23.2+0.3 Low on-resistanceNo secondary breadownLow driving power Avalanche-proof 0.32.1 0.3 1.6+0.2 1.10.1 0.2 3.5Applications 0.2 0.25.45 5.45 0.6+0.2 Switching regulators1. Gate UPS (Uninterruptible Powe

 8.5. Size:112K  fuji
2sk2901-01l-01s.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2901-01L,SN-CHANNEL SILICON POWER MOS-FET FeaturesT-Pack(L) T-Pack(S)High speed switching Low on-resistance10+0.5 0.24.5No secondary breadown 1.32Low driving power Avalanche-proof+0.2 0.21.2 0.10.80.4+0.2Applications2.75.08 Switching regulators1. Gate2, 4. Drain UPS (Uninterruptible Power Supply)3. Source DC-DC conv

 8.6. Size:111K  fuji
2sk2902-01mr.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2902-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25

 8.7. Size:115K  fuji
2sk2903-01mr.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2903-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25

 8.8. Size:111K  fuji
2sk2904-01.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2904-01N-CHANNEL SILICON POWER MOS-FET FeaturesTO-3PHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. SourceEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless ot

 8.9. Size:96K  fuji
2sk2905-01r.pdf

2SK2908-01L
2SK2908-01L

FUJI POWER MOS-FET2SK2905-01RN-CHANNEL SILICON POWER MOS-FET FeaturesTO-3PF5.5 0.3 0.3High speed switching 0.215.53.23.2+0.3 Low on-resistanceNo secondary breadownLow driving power Avalanche-proof 0.32.1 0.3 1.6+0.2 1.10.1 0.2Applications 3.5 0.2 0.25.45 5.45 0.6+0.2 Switching regulators1. Gate UPS (Uninterruptible Pow

 8.10. Size:288K  inchange semiconductor
2sk2900-01.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2900-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.11. Size:286K  inchange semiconductor
2sk2906-01.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2906-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.12. Size:356K  inchange semiconductor
2sk2901-01s.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2901-01SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.13. Size:274K  inchange semiconductor
2sk2907-01.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2907-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.14. Size:279K  inchange semiconductor
2sk2902-01mr.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2902-01MRFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

 8.15. Size:279K  inchange semiconductor
2sk2903-01mr.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2903-01MRFEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.16. Size:282K  inchange semiconductor
2sk2901-01l.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2901-01LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.17. Size:286K  inchange semiconductor
2sk2904-01.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2904-01FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

 8.18. Size:274K  inchange semiconductor
2sk2905-01r.pdf

2SK2908-01L
2SK2908-01L

isc N-Channel MOSFET Transistor 2SK2905-01RFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

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