2SK3322-S Todos los transistores

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 2sk3322 2sk3322-s 2sk3322-zj 2sk3322-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3322 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE The 2SK3322 is N-Channel DMOS FET device that 2SK3322 TO-220AB (MP-25) features a low gate charge and excellent switching 2SK3322-S TO-262 characteristics, and designed for high voltage 2SK3322-ZJ TO-263(MP-25ZJ) applications such as switch

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 2sk3322-s.pdf

isc N-Channel MOSFET Transistor 2SK3322-S FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 6.1. Size:357K  inchange semiconductor
 2sk3322-zj.pdf

isc N-Channel MOSFET Transistor 2SK3322-ZJ FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 6.2. Size:357K  inchange semiconductor
 2sk3322-zk.pdf

isc N-Channel MOSFET Transistor 2SK3322-ZK FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

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 2sk3322.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3322 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS =10 V, ID =5.5A) Gate voltage rating 30 V +0.1 0.1max 1.27-0.1 Low on-state resistance RDS(on) =2.2 MAX. (VGS =10V, ID =2.8A) +0.1 0.81-0.1 2.54 Avalanche capability ratings 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.

 7.2. Size:288K  inchange semiconductor
 2sk3322.pdf

isc N-Channel MOSFET Transistor 2SK3322 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno