2SK3322-S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3322-S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 65 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 2.5 V
Carga de la puerta (Qg): 15 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 2.2 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de MOSFET 2SK3322-S
2SK3322-S Datasheet (PDF)
2sk3322 2sk3322-s 2sk3322-zj 2sk3322-zk.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3322SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER PACKAGE The 2SK3322 is N-Channel DMOS FET device that 2SK3322 TO-220AB (MP-25)features a low gate charge and excellent switching 2SK3322-S TO-262characteristics, and designed for high voltage 2SK3322-ZJ TO-263(MP-25ZJ)applications such as switch
2sk3322-s.pdf
isc N-Channel MOSFET Transistor 2SK3322-SFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3322-zj.pdf
isc N-Channel MOSFET Transistor 2SK3322-ZJFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3322-zk.pdf
isc N-Channel MOSFET Transistor 2SK3322-ZKFEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3322.pdf
SMD Type MOSFETMOS Field Effect Transistor2SK3322TO-263Unit: mmFeatures +0.24.57-0.2+0.11.27-0.1Low gate chargeQG = 15 nC TYP. (VDD = 450V, VGS =10 V, ID =5.5A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistanceRDS(on) =2.2 MAX. (VGS =10V, ID =2.8A)+0.10.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.
2sk3322.pdf
isc N-Channel MOSFET Transistor 2SK3322FEATURESDrain Current : I = 5.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SWU6N65K
