STU668S Todos los transistores

 

STU668S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STU668S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 243 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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STU668S Datasheet (PDF)

 ..1. Size:124K  samhop
 stu668s std668s.pdf pdf_icon

STU668S

STU668SGreenProductSTD668SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.9.0 @ VGS=10VTO-252 and TO-251 Package.60V 50A13.2 @ VGS=4.5VGSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOL

 9.1. Size:124K  samhop
 stu666s std666s.pdf pdf_icon

STU668S

STU666SGreenProductSTD666SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.101 @ VGS=10VTO-252 and TO-251 Package.60V 6A 126 @ VGS=4.5V GSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOL

 9.2. Size:120K  samhop
 stu660 std660.pdf pdf_icon

STU668S

GreenProductSTU/D660SamHop Microelectronics Corp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.620 @VGS=10VTO-252 and TO-251 Package.80V 3A800 @VGS=4.5VESD Protected.DGGGSSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-

 9.3. Size:117K  samhop
 stu664s std664s.pdf pdf_icon

STU668S

STU664SGreenProductSTD664SSamHop Microelectronics Corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.60V 30A 20 @VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIESTO-252AA(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , 8205A , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , STU650S .

History: ECH8309 | SSS6N55

 

 
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