SM2301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM2301
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 6.396 nC
   trⓘ - Tiempo de subida: 9.836 nS
   Cossⓘ - Capacitancia de salida: 110.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SM2301

SM2301 Datasheet (PDF)

..1. Size:2460K cn sps
sm2301.pdf

SM2301P-Channel Enhancement-Mode MOSFETFeatures 1Advanced Trench Process Technology. 2High Density Cell Design for Ultra Low On-Resistance. 3Improved Shoot-Through FOM 4RoHS Compliant PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max100 @ VGS = -4.5V, ID=-2.8A 150 @ VGS = -2.5V, ID=-2.0A -20V -2.8A 170 @ VGS = -1.8V, ID=-2.0A SM2301 Pin Assignment &

0.1. Size:119K taiwansemi
tsm2301bcx.pdf

0.2. Size:249K taiwansemi
tsm2301a.pdf

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23

0.3. Size:340K taiwansemi
tsm2301acx tsm2301cx.pdf

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

0.4. Size:118K taiwansemi
tsm2301.pdf

0.5. Size:877K globaltech semi
gsm2301as.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage

0.6. Size:827K globaltech semi
gsm2301s.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt

0.7. Size:816K globaltech semi
gsm2301a.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low

0.8. Size:477K globaltech semi
gsm2301.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

0.9. Size:150K silicon standard
ssm2301gn.pdf

SSM2301NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BV -20VDSSSmall package outline RDS(ON) 130mDSurface-mount device ID -2.3ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard Corp. provide thedesigner with the best combination of fast switching, lowGon-resistance and cost-effectiveness.SThe SOT-23 package is widely preferred for co

0.10. Size:353K jsmsemi
jsm2301s.pdf

JSM2301S/Features 1 2 /Applications /Absolute maximum ratings(Ta=25) /Parameter / Symbol /Value /Unit -/Drain-Source Voltage V -20 V DS-/Gate-Source Voltage V 8 V GS/C

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