SM2312SRL Todos los transistores

 ..1. Size:769K  cn sps
 sm2312srl.pdf

SM2312SRL 20V /6A Single N Power MOSFET B N02B N 20V /6A Single N Power MOSFET 6N02B General Description 20 V V DS 20V /6A Single N Power MOSFET 18.9 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 42.0 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 6 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested SM231

 8.1. Size:120K  taiwansemi
 tsm2312.pdf

 8.2. Size:213K  taiwansemi
 tsm2312cx.pdf

TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In

 8.3. Size:257K  sino
 sm2312nsa.pdf

SM2312NSA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3A, D RDS(ON)=72m (max.) @ VGS=10V S RDS(ON)=100m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G DC-DC Conversion. Load Switch for PC fields. S Load Switch for Portables. N-Channel MOSFET Ordering and Marki

 8.4. Size:1189K  globaltech semi
 gsm2312.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Super high density cell design for e

 8.5. Size:1178K  globaltech semi
 gsm2312a.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Super high density cell design for

 8.6. Size:310K  silicon standard
 ssm2312gn.pdf

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 20V D Simple drive requirement R 50m DS(ON) Fast switching ID 4.3A G Pb-free; RoHS compliant. S DESCRIPTION D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. This device is S suitable for low-voltage applications such as DC

 8.7. Size:911K  cn vbsemi
 tsm2312cx.pdf

TSM2312CX www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

 8.8. Size:896K  cn vbsemi
 sm2312nsa.pdf

SM2312NSA www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)