SM3407 Todos los transistores

 ..1. Size:3541K  cn sps
 sm3407.pdf

SM3407 P-Channel Enhancement-Mode MOSFET (-30V, -4.3A) Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = -10 V,ID=-4.3A -30V -4.3A 78 @ VGS = -4.5V,ID=-3.0A Features 1 Super high dense cell trench design for low RDS(on). 2 Rugged and reliable. 3 SOT-23 package 4 RoHS Compliant. SM3407 Pin Assignment & Symbol Ordering Information

 0.1. Size:248K  sino
 sm3407psqa.pdf

SM3407PSQA P-Channel Enhancement Mode MOSFET Features Pin Description D -20V/-11A, D D D RDS(ON) = 17m (max.) @ VGS =-4.5V RDS(ON) = 25m (max.) @ VGS =-2.5V G S S RDS(ON) = 45m (max.) @ VGS =-1.8V S Reliable and Rugged DFN3.3x3.3A-8_EP Lead Free and Green Devices Available (RoHS Compliant) ( 5,6,7,8 ) DDDD HBM ESD protection level pass 2KV Note The diode connected

 0.2. Size:864K  globaltech semi
 gsm3407s.pdf

GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 0.3. Size:846K  globaltech semi
 gsm3407as.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)