SM3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM3407
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 28 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 440 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SM3407
SM3407 Datasheet (PDF)
sm3407.pdf
SM3407P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = -10 V,ID=-4.3A -30V -4.3A 78 @ VGS = -4.5V,ID=-3.0A Features 1 Super high dense cell trench design for low RDS(on). 2 Rugged and reliable. 3 SOT-23 package 4 RoHS Compliant.SM3407 Pin Assignment & Symbol Ordering Information
sm3407psqa.pdf
SM3407PSQAP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD -20V/-11A,DDDRDS(ON) = 17m (max.) @ VGS =-4.5VRDS(ON) = 25m (max.) @ VGS =-2.5VGSSRDS(ON) = 45m (max.) @ VGS =-1.8V S Reliable and RuggedDFN3.3x3.3A-8_EP Lead Free and Green Devices Available(RoHS Compliant)( 5,6,7,8 )DDDD HBM ESD protection level pass 2KVNote : The diode connected
gsm3407s.pdf
GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm3407as.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)
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