SM3415 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3415
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SM3415

SM3415 Datasheet (PDF)

..1. Size:12448K cn sps
sm3415.pdf

SM3415P-Channel Enhancement-Mode MOSFETSMSOT-23Top ViewGDSPRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60@ VGS = -4.5V45 @ VGS = -2.5V -20V -4A Ordering Information Ordering Number Pin AssignmentPackage PackingLead Free Halogen Free 1 2 3 SM3415SR GSM3415SR L SOT-23 G S D Tape ReelSM3415 X X X (1) SSOT-23(1)Package Type (2) R

0.1. Size:920K globaltech semi
gsm3415.pdf

GSM3415 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.4A,RDS(ON)=58m@VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-2.2A,RDS(ON)=85m@VGS=-1.8V Super high density cell design for extremely These devic

9.1. Size:162K sino
sm3413psqg.pdf

SM3413PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-62A,DDDDRDS(ON) = 7.5m(max.) @ VGS =-10VRDS(ON) = 13m(max.) @ VGS =-4.5VGSPin 1S HBM ESD protection level pass 8KVS 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )DDDD (RoHS Compliant)Note : The diode connected

9.2. Size:659K sino
sm3419nhqa.pdf

SM3419NHQAN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100ADDDDRDS(ON)=2m(max.)@VGS=10VRDS(ON)=2.4m(max.)@VGS=4.5V GSSRDS(ON)=3.8m(max.)@VGS=2.5VS 100% UIS + Rg Tested DFN3.3x3.3D-8_EP ESD Protection Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications

9.3. Size:255K sino
sm3412nhqg.pdf

SM3412NHQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) = 1.8m (max.) @ VGS =10VRDS(ON) = 3.1m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3x3.3B-8_EP Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer,

9.4. Size:875K globaltech semi
gsm3413.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m@VGS=-1.8V Super high density cell design for extremely These devices are particularly su

9.5. Size:1106K globaltech semi
gsm3416.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m@VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m@VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m@VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

9.6. Size:820K globaltech semi
gsm3413a.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=110m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.2A,RDS(ON)=150m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=205m@VGS=-1.8V Super high density cell design for extremely These devices are par

9.7. Size:889K globaltech semi
gsm3410.pdf

GSM3410 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.5A,RDS(ON)=30m@VGS=4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-6 p

9.8. Size:1087K globaltech semi
gsm3414s.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.4A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

9.9. Size:733K globaltech semi
gsm3411.pdf

GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

9.10. Size:1310K globaltech semi
gsm3414a.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=80m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

9.11. Size:3582K cn sps
sm3416.pdf

SM3416N-Channel Enhancement-Mode MOSFET (20V,6.5A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 22 @ VGS = 4.5V, ID=6.5A26 @ VGS = 2.5V, ID=5.5A20V 6.5A 34 @ VGS = 1.8V, ID=5.0AFeatures The SM3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch

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