SM3416 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM3416
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 6.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 12.7 nS
Conductancia de drenaje-sustrato (Cd): 104 pF
Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SM3416
SM3416 Datasheet (PDF)
sm3416.pdf
SM3416N-Channel Enhancement-Mode MOSFET (20V,6.5A)PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 22 @ VGS = 4.5V, ID=6.5A26 @ VGS = 2.5V, ID=5.5A20V 6.5A 34 @ VGS = 1.8V, ID=5.0AFeatures The SM3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch
gsm3416.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m@VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m@VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m@VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
sm3413psqg.pdf
SM3413PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-62A,DDDDRDS(ON) = 7.5m(max.) @ VGS =-10VRDS(ON) = 13m(max.) @ VGS =-4.5VGSPin 1S HBM ESD protection level pass 8KVS 100% UIS + Rg TestedDFN3.3x3.3C-8_EP Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )DDDD (RoHS Compliant)Note : The diode connected
sm3419nhqa.pdf
SM3419NHQAN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/100ADDDDRDS(ON)=2m(max.)@VGS=10VRDS(ON)=2.4m(max.)@VGS=4.5V GSSRDS(ON)=3.8m(max.)@VGS=2.5VS 100% UIS + Rg Tested DFN3.3x3.3D-8_EP ESD Protection Reliable and Rugged(5,6,7,8)D D D D Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications
sm3412nhqg.pdf
SM3412NHQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/50A, DRDS(ON) = 1.8m (max.) @ VGS =10VRDS(ON) = 3.1m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3.3x3.3B-8_EP Avalanche Rated Reliable and Rugged(5,6,7,8)D D DD Lead Free and Green Devices Available(RoHS Compliant)Applications (4) G Power Management in Notebook Computer,
gsm3413.pdf
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m@VGS=-1.8V Super high density cell design for extremely These devices are particularly su
gsm3413a.pdf
20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=110m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.2A,RDS(ON)=150m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=205m@VGS=-1.8V Super high density cell design for extremely These devices are par
gsm3410.pdf
GSM3410 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.5A,RDS(ON)=30m@VGS=4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-6 p
gsm3414s.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.4A,RDS(ON)=60m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l
gsm3411.pdf
GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm3414a.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=80m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l
gsm3415.pdf
GSM3415 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.4A,RDS(ON)=58m@VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-2.2A,RDS(ON)=85m@VGS=-1.8V Super high density cell design for extremely These devic
sm3415.pdf
SM3415P-Channel Enhancement-Mode MOSFETSMSOT-23Top ViewGDSPRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60@ VGS = -4.5V45 @ VGS = -2.5V -20V -4A Ordering Information Ordering Number Pin AssignmentPackage PackingLead Free Halogen Free 1 2 3 SM3415SR GSM3415SR L SOT-23 G S D Tape ReelSM3415 X X X (1) SSOT-23(1)Package Type (2) R
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