SM3416 Datasheet. Equivalente

 ..1. Size:3582K  cn sps
 sm3416.pdf

SM3416 N-Channel Enhancement-Mode MOSFET (20V,6.5A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 22 @ VGS = 4.5V, ID=6.5A 26 @ VGS = 2.5V, ID=5.5A 20V 6.5A 34 @ VGS = 1.8V, ID=5.0A Features The SM3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch

 0.1. Size:1106K  globaltech semi
 gsm3416.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m @VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m @VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m @VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.1. Size:162K  sino
 sm3413psqg.pdf

SM3413PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-62A, D D D D RDS(ON) = 7.5m (max.) @ VGS =-10V RDS(ON) = 13m (max.) @ VGS =-4.5V G S Pin 1 S HBM ESD protection level pass 8KV S 100% UIS + Rg Tested DFN3.3x3.3C-8_EP Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) DDDD (RoHS Compliant) Note The diode connected

 9.2. Size:659K  sino
 sm3419nhqa.pdf

SM3419NHQA N-Channel Enhancement Mode MOSFET Features Pin Description 30V/100A D D D D RDS(ON)=2m (max.)@VGS=10V RDS(ON)=2.4m (max.)@VGS=4.5V G S S RDS(ON)=3.8m (max.)@VGS=2.5V S 100% UIS + Rg Tested DFN3.3x3.3D-8_EP ESD Protection Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications

 9.3. Size:255K  sino
 sm3412nhqg.pdf

SM3412NHQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/50A, D RDS(ON) = 1.8m (max.) @ VGS =10V RDS(ON) = 3.1m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3.3x3.3B-8_EP Avalanche Rated Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,

 9.4. Size:875K  globaltech semi
 gsm3413.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m @VGS=-1.8V Super high density cell design for extremely These devices are particularly su

 9.5. Size:820K  globaltech semi
 gsm3413a.pdf

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=110m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.2A,RDS(ON)=150m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=205m @VGS=-1.8V Super high density cell design for extremely These devices are par

 9.6. Size:889K  globaltech semi
 gsm3410.pdf

GSM3410 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.5A,RDS(ON)=30m @VGS=4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-6 p

 9.7. Size:1087K  globaltech semi
 gsm3414s.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.4A,RDS(ON)=60m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m @VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

 9.8. Size:733K  globaltech semi
 gsm3411.pdf

GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.9. Size:1310K  globaltech semi
 gsm3414a.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=80m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m @VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

 9.10. Size:920K  globaltech semi
 gsm3415.pdf

GSM3415 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.4A,RDS(ON)=58m @VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-2.2A,RDS(ON)=85m @VGS=-1.8V Super high density cell design for extremely These devic

 9.11. Size:12448K  cn sps
 sm3415.pdf