STU666S Todos los transistores

 

STU666S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU666S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 41 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.101 Ohm

Encapsulados: TO252 DPAK

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STU666S datasheet

 ..1. Size:124K  samhop
 stu666s std666s.pdf pdf_icon

STU666S

STU666S Green Product STD666S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 101 @ VGS=10V TO-252 and TO-251 Package. 60V 6A 126 @ VGS=4.5V G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOL

 9.1. Size:124K  samhop
 stu668s std668s.pdf pdf_icon

STU666S

STU668S Green Product STD668S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 9.0 @ VGS=10V TO-252 and TO-251 Package. 60V 50A 13.2 @ VGS=4.5V G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOL

 9.2. Size:120K  samhop
 stu660 std660.pdf pdf_icon

STU666S

Green Product STU/D660 SamHop Microelectronics Corp. Ver 2.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 620 @VGS=10V TO-252 and TO-251 Package. 80V 3A 800 @VGS=4.5V ESD Protected. D G G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-

 9.3. Size:117K  samhop
 stu664s std664s.pdf pdf_icon

STU666S

STU664S Green Product STD664S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 60V 30A 20 @VGS=10V TO-252 and TO-251 Package. G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS

MOSTRAR MÁS

Otros transistores... STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 , 2N7002 , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , STU650S , FCH47N60NF , STU630S .

 

 

 


 
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