FCH47N60 Todos los transistores

 ..1. Size:1062K  fairchild semi
 fch47n60 f133 fca47n60 fca47n60 f109.pdf

December 2008 TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

 ..2. Size:381K  fairchild semi
 fch47n60 f085.pdf

November 2013 FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79m D Features Typ rDS(on) = 64m at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 ..3. Size:286K  fairchild semi
 fch47n60 fch47n60 f133.pdf

February TM SuperFET FCH47N60_F133 Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

 ..4. Size:509K  onsemi
 fch47n60.pdf

 0.1. Size:382K  fairchild semi
 fch47n60f f085.pdf

October 2013 FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75m D Features Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 0.2. Size:599K  fairchild semi
 fch47n60n.pdf

May 2010 SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62m Features Description RDS(on) = 51.5m ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg =115nC) process that differentiates it from preceding multi-epi based technologies. By ut

 0.3. Size:295K  fairchild semi
 fch47n60nf.pdf

January 2011 SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65m Features Description RDS(on) = 57.5m (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ. Qg = 121nC) process that differentiates it from preceding multi-epi based techno

 0.4. Size:197K  fairchild semi
 fch47n60f.pdf

February TM SuperFET FCH47N60F _F133 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

 0.5. Size:673K  onsemi
 fch47n60n.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.6. Size:675K  onsemi
 fch47n60nf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.7. Size:408K  onsemi
 fch47n60f.pdf

MOSFET N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor s first generation of www.onsemi.com high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to VDS RDS(ON) MAX ID MAX minimize conduct