SM4606 Todos los transistores

 ..1. Size:25275K  cn sps
 sm4606.pdf

SM4606 P-Channel Enhancement-Mode MOSFET Description SM4606 N-channel P-channel Schematic diagram General Features N-Channel Marking and pin assignment P-Channel SOP-8 top view Ordering Information Ordering Number Pin Assignment Package Packing 1 2 3 4 5 6 7 Lead Free Halogen Free 8 SM4606SR G D1 D2 SM4606PR L SOP-8 S2 S1 G1 D1 D2 G2 Tape Reel SM4606

 0.1. Size:361K  huashuo
 hsm4606.pdf

HSM4606 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSM4606 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 22m 7A cell density, which provide excellent RDSON and gate charge for most of the synchronous buck -30V 26m -6A converter applications. The HSM4606 meet the RoHS and Green Product requirement

 9.1. Size:277K  sino
 sm4601csk.pdf

SM4601CSK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D1 N Channel D1 D2 D2 30V/8A, RDS(ON) = 21m (max.) @ VGS = 10V S1 RDS(ON) = 30m (max.) @ VGS = 4.5V G1 S2 P Channel G2 -30V/-5A, Top View of SOP-8 RDS(ON) = 53m (max.) @ VGS =-10V (8) (7) (6) (5) D1 D1 RDS(ON) = 83m (max.) @ VGS =-4.5V D2 D2 100% UIS + Rg Tested Reliable and Rugged

 9.2. Size:278K  sino
 sm4600csk.pdf

SM4600CSK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D1 N Channel D1 D2 D2 30V/8.8A, RDS(ON) = 17m (max.) @ VGS = 10V S1 RDS(ON) = 23m (max.) @ VGS = 4.5V G1 S2 P Channel G2 -30V/-8.2A, Top View of SOP-8 RDS(ON) = 20m (max.) @ VGS =-10V (8) (7) (6) (5) D1 D1 RDS(ON) = 33m (max.) @ VGS =-4.5V D2 D2 100% UIS + Rg Tested Reliable and Ru

 9.3. Size:307K  sino
 sm4603csk.pdf

SM4603CSK Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description D1 N Channel D1 D2 D2 30V/8.7A, RDS(ON) = 21m (max.) @ VGS = 10V S1 RDS(ON) = 30m (max.) @ VGS = 4.5V G1 S2 P Channel G2 -30V/-8.2A, Top View of SOP 8 RDS(ON) = 24m (max.) @ VGS =-10V (8) (7) (6) (5) D1 D1 RDS(ON) = 38m (max.) @ VGS =-4.5V D2 D2 100% UIS Tested Reliable and Rugged