SM4800 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM4800

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: SOP8

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SM4800 datasheet

 ..1. Size:28499K  cn sps
sm4800.pdf pdf_icon

SM4800

SM4800 Dual N-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement-Mode MOSFET Description The SM4800 uses advanced trench technology to 1 8 S2 D2 provide excellent RDS(ON) and low gate charge. The 2 7 G2 D2 two MOSFETs make a compact and efficient switch 3 6 S1 D1 and synchronous rectifier combination for use in 4 5 G1 D1 buck converters. SOIC-8 General F

 0.1. Size:283K  silicon standard
ssm4800agm.pdf pdf_icon

SM4800

SSM4800AGM N-Channel Enhancement Mode Power Mosfet PRODUCT SUMMARY D Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D Fast Switching Characteristic ID 9.4A G RoHS Compliant S S SO-8 S DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on

 9.1. Size:269K  sino
sm4802dsk.pdf pdf_icon

SM4800

SM4802DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 30V/11.2A, D2 D2 RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 12m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equ

 9.2. Size:269K  sino
sm4805dsk.pdf pdf_icon

SM4800

SM4805DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/6A, D1 D2 D2 RDS(ON)= 21m (max.) @ VGS= 10V RDS(ON)= 30m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equipm

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