SM600R65CT9RL Todos los transistores

 

SM600R65CT9RL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM600R65CT9RL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 52 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 25 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 110 pF
   Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
   Paquete / Cubierta: TO252

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SM600R65CT9RL Datasheet (PDF)

 5.1. Size:874K  cn sps
sm600r65c.pdf

SM600R65CT9RL SM600R65CT9RL

SM600R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 7A IRF600R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson(max) 0.6(VGS=10V, ID=3.5A) technology. These user friendly device

 9.1. Size:274K  eupec
bsm600ga120dlc.pdf

SM600R65CT9RL SM600R65CT9RL

Technische Information / technical informationIGBT-ModuleBSM600GA120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

 9.2. Size:280K  eupec
bsm600ga120dlcs.pdf

SM600R65CT9RL SM600R65CT9RL

Technische Information / technical informationIGBT-ModuleBSM600GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr

 9.3. Size:281K  sino
sm6002nskp.pdf

SM600R65CT9RL SM600R65CT9RL

SM6002NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/60A,DDD RDS(ON)=8m (max.) @ VGS=10V Reliable and RuggedGPin 1S Lead Free and Green Devices Available SS(RoHS Compliant)DFN5x6-8D (5, 6)ApplicationsG (4) SMPS Synchronous Rectifier. Power Management in DC/DC Converters.S (1, 2, 3) SMPS Secondary O-ring.N-Channel MOSFET.

 9.4. Size:261K  sino
sm6002nsu.pdf

SM600R65CT9RL SM600R65CT9RL

SM6002NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80A,DRDS(ON)=8m (max.) @ VGS=10VS Reliable and Rugged Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-252-3DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6002NS U

 9.5. Size:278K  sino
sm6008nsg.pdf

SM600R65CT9RL SM600R65CT9RL

SM6008NSGN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**,D RDS(ON)= 3.4m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant) Top View of TO-263-3DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6

 9.6. Size:281K  sino
sm6008nf sm6008nfp.pdf

SM600R65CT9RL SM600R65CT9RL

SM6008NF/SM6008NFPN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/210A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and RuggedS SD D Lead Free and Green Devices Available G G(RoHS Compliant) Top View of TO-220 Top View of TO-220-FPDApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Mark

 9.7. Size:157K  sino
sm6009nsf.pdf

SM600R65CT9RL SM600R65CT9RL

SM6009NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/160Aa, RDS(ON)= 3.6m(max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply.S High Speed Power Switching.N-Channel MO

 9.8. Size:250K  sino
sm6002nsf.pdf

SM600R65CT9RL SM600R65CT9RL

SM6002NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/80A,RDS(ON)=8m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6002NS F :

 9.9. Size:156K  sino
sm6002naf.pdf

SM600R65CT9RL SM600R65CT9RL

SM6002NAFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/82Aa,RDS(ON)= 8.0m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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