SM600R65CT2TL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM600R65CT2TL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de SM600R65CT2TL MOSFET

- Selecciónⓘ de transistores por parámetros

 

SM600R65CT2TL datasheet

 5.1. Size:874K  cn sps
sm600r65c.pdf pdf_icon

SM600R65CT2TL

SM600R65C 30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 7A IRF600R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson(max) 0.6 (VGS=10V, ID=3.5A) technology. These user friendly device

 9.1. Size:274K  eupec
bsm600ga120dlc.pdf pdf_icon

SM600R65CT2TL

Technische Information / technical information IGBT-Module BSM600GA120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro

 9.2. Size:280K  eupec
bsm600ga120dlcs.pdf pdf_icon

SM600R65CT2TL

Technische Information / technical information IGBT-Module BSM600GA120DLCS IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstr

 9.3. Size:281K  sino
sm6002nskp.pdf pdf_icon

SM600R65CT2TL

SM6002NSKP N-Channel Enhancement Mode MOSFET Features Pin Description D 60V/60A, D D D RDS(ON)=8m (max.) @ VGS=10V Reliable and Rugged G Pin 1 S Lead Free and Green Devices Available S S (RoHS Compliant) DFN5x6-8 D (5, 6) Applications G (4) SMPS Synchronous Rectifier. Power Management in DC/DC Converters. S (1, 2, 3) SMPS Secondary O-ring. N-Channel MOSFET .

Otros transistores... SM4818, SM4828APRL, SM4840PRL, SM4842PRL, SM4862EPRL, SM4953, SM514T9RL, SM600R65CT9RL, 10N65, SM600R65CT1TL, SM6204D1RL, SM6358D1RL, SM6362D1RL, SM6366ED1RL, SM6426D1RL, SM6442D1RL, SM6512D1RL