SMIRF10N65T2TL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMIRF10N65T2TL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 max nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220F

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SMIRF10N65T2TL datasheet

 4.1. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF10N65T2TL

SMIRF10N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0 (VGS=10V, ID=5A) on-state resistance, provide superior

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF10N65T2TL

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior

 8.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF10N65T2TL

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior

 8.3. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF10N65T2TL

SMIRF18N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35 (VGS=10V, ID=9A) on-state resistance, provide superior

MOSTRAR MÁS

Otros transistores... SM6590D1RL, SM66406D1RL, SM6796D1RL, SM6802S1RL, SM9435, SM95N03A, SM9926, SMIRF10N65T1TL, IRF1405, SMIRF12N65T1TL, SMIRF12N65T2TL, SMIRF13N50T1TL, SMIRF13N50T2TL, SMIRF16N65T1TL, SMIRF16N65T2TL, SMIRF16N65T8TL, SMIRF18N50T1TL