SMIRF13N50T2TL Todos los transistores

 

SMIRF13N50T2TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMIRF13N50T2TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

SMIRF13N50T2TL Datasheet (PDF)

 4.1. Size:1322K  cn sps
 smirf13n50.pdf pdf_icon

SMIRF13N50T2TL

SMIRF13N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48(VGS=10V, ID=6.5A) on-state resistance, provide superi

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF13N50T2TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 8.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF13N50T2TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 8.3. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF13N50T2TL

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 10N65KG-TF3-T | 11P50A

 

 
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