SMIRF16N65T8TL Todos los transistores

 

SMIRF16N65T8TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMIRF16N65T8TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO247
 

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SMIRF16N65T8TL Datasheet (PDF)

 4.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF16N65T8TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 8.1. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF16N65T8TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 8.2. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF16N65T8TL

SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior

 8.3. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF16N65T8TL

SMIRF18N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35(VGS=10V, ID=9A) on-state resistance, provide superior

MOSTRAR MÁS

Otros transistores... SMIRF10N65T1TL , SMIRF10N65T2TL , SMIRF12N65T1TL , SMIRF12N65T2TL , SMIRF13N50T1TL , SMIRF13N50T2TL , SMIRF16N65T1TL , SMIRF16N65T2TL , 8N60 , SMIRF18N50T1TL , SMIRF18N50T2TL , SMIRF18N50T8TL , SMIRF20N65T1TL , SMIRF20N65T2TL , SMIRF20N65T8TL , SMIRF4N65T1TL , SMIRF4N65T2TL .

History: STP40NS15 | HCT7000MTXV | TPC70R190C | AP65SL099AS | HY3215W | CHM4269PA4GP | TPD70R360M

 

 
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