SMIRF4N65T1TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMIRF4N65T1TL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 13.7 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 62 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SMIRF4N65T1TL
SMIRF4N65T1TL Datasheet (PDF)
smirf4n65.pdf
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SMIRF4N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8(VGS=10V, ID=2A) on-state resistance, provide superior swi
smirf16n65.pdf
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SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior
smirf12n65.pdf
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SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior
smirf8n60.pdf
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SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi
smirf7n65.pdf
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SMIRF7N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 7A SMIRF7N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.3(VGS=10V, ID=3.5A) on-state resistance, provide superior s
smirf10n65.pdf
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SMIRF10N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0(VGS=10V, ID=5A) on-state resistance, provide superior
smirf20n65.pdf
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SMIRF20N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5(VGS=10V, ID=10A) on-state resistance, provide superior s
smirf8n65.pdf
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SMIRF8N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi
smirf5n65.pdf
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SMIRF5N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 5A SMIRF5N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.3(VGS=10V, ID=2.5A) on-state resistance, provide superior
smirf18n50.pdf
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SMIRF18N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35(VGS=10V, ID=9A) on-state resistance, provide superior
smirf13n50.pdf
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SMIRF13N5030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48(VGS=10V, ID=6.5A) on-state resistance, provide superi
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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Liste
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