SMIRF4N65T9RL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SMIRF4N65T9RL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO252

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SMIRF4N65T9RL datasheet

 5.1. Size:753K  cn sps
 smirf4n65.pdf pdf_icon

SMIRF4N65T9RL

SMIRF4N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 4A SMIRF4N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 2.8 (VGS=10V, ID=2A) on-state resistance, provide superior swi

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF4N65T9RL

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF4N65T9RL

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF4N65T9RL

SMIRF8N60 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2 (VGS=10V, ID=4A) on-state resistance, provide superior switchi

MOSTRAR MÁS

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