SMIRF4N65T9RL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMIRF4N65T9RL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 30 nS
Conductancia de drenaje-sustrato (Cd): 62 pF
Resistencia entre drenaje y fuente RDS(on): 2.8 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET SMIRF4N65T9RL
SMIRF4N65T9RL Datasheet (PDF)
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