2SK2941 Datasheet. Equivalente

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 2sk2941.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. FEATURE 10.6 MAX. 4.8 MAX. Low On-Resistance 3.6 0.2 1.3 0.2 10.0 RDS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 m T

 ..2. Size:289K  inchange semiconductor
 2sk2941.pdf

isc N-Channel MOSFET Transistor 2SK2941 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

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 2sk294 2sk295.pdf

 8.2. Size:422K  toshiba
 2sk2949.pdf

2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2949 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.4 (typ.) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (

 8.3. Size:142K  renesas
 rej03g1054 2sk2940lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:128K  renesas
 2sk2940.pdf

2SK2940(L), 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1054-0400 (Previous ADE-208-563B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(

 8.5. Size:43K  sanken-ele
 2sk2943.pdf

2SK2943 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V I = 100 A, V = 0V (BR) DSS D GS V 900 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 900V, V = 0V DSS DS GS I 3A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 12 A

 8.6. Size:283K  inchange semiconductor
 2sk2940l.pdf

isc N-Channel MOSFET Transistor 2SK2940L FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.7. Size:282K  inchange semiconductor
 2sk2949l.pdf

isc N-Channel MOSFET Transistor 2SK2949L FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.8. Size:356K  inchange semiconductor
 2sk2949s.pdf

isc N-Channel MOSFET Transistor 2SK2949S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.9. Size:200K  inchange semiconductor
 2sk2943.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2943 FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 8.10. Size:289K  inchange semiconductor
 2sk294.pdf

isc N-Channel MOSFET Transistor 2SK294 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 0.56 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.11. Size:357K  inchange semiconductor
 2sk2940s.pdf

isc N-Channel MOSFET Transistor 2SK2940S FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 13m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid