2SK2993S Datasheet. Equivalente

 ..1. Size:355K  inchange semiconductor
 2sk2993s.pdf

isc N-Channel MOSFET Transistor 2SK2993S FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.11 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 7.1. Size:424K  toshiba
 2sk2993.pdf

2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2993 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 82 m (typ.) High forward transfer admittance Y = 20 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (V

 7.2. Size:281K  inchange semiconductor
 2sk2993l.pdf

isc N-Channel MOSFET Transistor 2SK2993L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.11 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:417K  toshiba
 2sk2995.pdf

2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2995 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 48 m (typ.) (ON) High forward transfer admittance Y = 30 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (

 8.2. Size:391K  toshiba
 2sk2992.pdf

2SK2992 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2992 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 2.2 (typ.) (ON) High forward transfer admittance Y = 0.9 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 2.0 3.5 V

 8.3. Size:367K  toshiba
 2sk2998.pdf

2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2998 Chopper Regulator, DC-DC Converter Applications Unit mm Low drain-source ON resistance RDS = 11.5 (typ.) (ON) High forward transfer admittance Y = 0.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I =

 8.4. Size:411K  toshiba
 2sk2996.pdf

2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2996 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.74 (typ.) (ON) High forward transfer admittance Y = 6.8 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V =

 8.5. Size:420K  toshiba
 2sk2991.pdf

2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2991 DC-DC Converter Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 1.35 (typ.) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10

 8.6. Size:123K  hitachi
 2sk298 2sk299.pdf

 8.7. Size:1503K  kexin
 2sk2992.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2992 Features 1.70 0.1 VDS (V) = 200V ID = 1 A (VGS = 10V) RDS(ON) 3.5 (VGS = 10V) 0.42 0.1 0.46 0.1 High Forward Transfer Amdittance Low Leakage Current 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 Drain-Gate Voltage (RGS=20K )

 8.8. Size:273K  inchange semiconductor
 2sk2995.pdf

isc N-Channel MOSFET Transistor 2SK2995 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.8 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:224K  inchange semiconductor
 2sk2996.pdf

isc N-Channel MOSFET Transistor 2SK2996 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Low leakage current High forward transfer admittance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,Relay Drive and motor Drive Application ABSOLUTE MAXIMUM RATINGS(T =25 )

 8.10. Size:355K  inchange semiconductor
 2sk2991s.pdf

isc N-Channel MOSFET Transistor 2SK2991S FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.11. Size:277K  inchange semiconductor
 2sk299.pdf

isc N-Channel MOSFET Transistor 2SK299 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.75 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.12. Size:281K  inchange semiconductor
 2sk2991l.pdf

isc N-Channel MOSFET Transistor 2SK2991L FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi