2SK2993S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2993S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 250 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Resistencia entre drenaje y fuente RDS(on): 0.11 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET 2SK2993S
2SK2993S Datasheet (PDF)
2sk2993s.pdf
isc N-Channel MOSFET Transistor 2SK2993SFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.11(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2993.pdf
2SK2993 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2993 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 82 m (typ.) High forward transfer admittance : |Y | = 20 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V
2sk2993l.pdf
isc N-Channel MOSFET Transistor 2SK2993LFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.11(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk2995.pdf
2SK2995 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2995 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 48 m (typ.) (ON) High forward transfer admittance : |Y | = 30 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (
2sk2992.pdf
2SK2992 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2992 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.2 (typ.) (ON) High forward transfer admittance : |Y | = 0.9 S (typ.) fs Low leakage current : I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode : Vth = 2.0~3.5 V
2sk2998.pdf
2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2998 Chopper Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance : RDS = 11.5 (typ.) (ON) High forward transfer admittance : |Y | = 0.4 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I =
2sk2996.pdf
2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2996 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 0.74 (typ.) (ON) High forward transfer admittance : |Y | = 6.8 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
2sk2991.pdf
2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2991 DC-DC Converter Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 1.35 (typ.) High forward transfer admittance : |Y | = 4.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10
2sk2992.pdf
SMD Type MOSFETN-Channel MOSFET2SK2992 Features 1.70 0.1 VDS (V) = 200V ID = 1 A (VGS = 10V) RDS(ON) 3.5 (VGS = 10V)0.42 0.10.46 0.1 High Forward Transfer Amdittance Low Leakage Current1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 Drain-Gate Voltage (RGS=20K)
2sk2995.pdf
isc N-Channel MOSFET Transistor 2SK2995FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2996.pdf
isc N-Channel MOSFET Transistor 2SK2996FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSLow leakage currentHigh forward transfer admittanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,Relay Drive and motor Drive ApplicationABSOLUTE MAXIMUM RATINGS(T =25)
2sk2991s.pdf
isc N-Channel MOSFET Transistor 2SK2991SFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk299.pdf
isc N-Channel MOSFET Transistor 2SK299FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.75(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk2991l.pdf
isc N-Channel MOSFET Transistor 2SK2991LFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MME60R290PRH
