FCH76N60NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH76N60NF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 543 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 46 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Encapsulados: TO247 TO3P TO3PF
Búsqueda de reemplazo de FCH76N60NF MOSFET
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FCH76N60NF datasheet
fch76n60nf.pdf
January 2011 SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description RDS(on) = 28.7m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 230nC) process that differentiates it from preceding multi-epi based technologies. By
fch76n60nf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fch76n60n.pdf
May 2010 SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36m Features Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 218nC) process that differentiates it from preceding multi-epi based technologies. By utili
Otros transistores... FCH47N60F , STU660 , FCH47N60N , STU650S , FCH47N60NF , STU630S , FCH76N60N , STU624S , 13N50 , STU622S , FCI25N60NF102 , STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N .
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