FCH76N60NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2011SupreMOSFCH76N60NFtm600V N-Channel MOSFET, FRFET Features Description RDS(on) = 28.7m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 230nC)process that differentiates it from preceding multi-epi based technologies. By

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

May 2010SupreMOSTMFCH76N60NN-Channel MOSFET 600V, 76A, 36mFeatures Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 218nC)process that differentiates it from preceding multi-epi based technologies. By utili