2SK3325-S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3325-S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm

Encapsulados: TO262

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2SK3325-S datasheet

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 2sk3325 2sk3325-s 2sk3325-zj.pdf pdf_icon

2SK3325-S

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3325 is N-Channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristics, and 2SK3325 TO-220AB designed for high voltage applications such as switching power 2SK3325-S TO-262 supply, AC adapter.

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 2sk3325-s.pdf pdf_icon

2SK3325-S

isc N-Channel MOSFET Transistor 2SK3325-S FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

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 2sk3325-zj.pdf pdf_icon

2SK3325-S

isc N-Channel MOSFET Transistor 2SK3325-ZJ FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

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 2sk3325.pdf pdf_icon

2SK3325-S

SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3325 TO-263 Unit mm +0.2 Features 4.57-0.2 1.27+0.1 -0.1 Low gate charge QG = 22 nC TYP. (VDD = 400 V, VGS =10V, ID =10A) Gate voltage rating 30 V Low on-state resistance 0.1max 1.27+0.1 -0.1 RDS(on) =0.85 MAX. (VGS =10V, ID =5.0 A) +0.1 Avalanche capability ratings 0.81-0.1 2.54 1Gate 2.54+0.2 +0.2 -0.

MOSTRAR MÁS

Otros transistores... 2SK3101LS, 2SK3193, 2SK3217-01MR, 2SK3278D, 2SK3278I, 2SK3301D, 2SK3301I, 2SK3305-S, IRF4905, 2SK3325-ZJ, 2SK3352, 2SK3352B, 2SK3352K, 2SK3355-S, 2SK3355-ZJ, 2SK3399B, 2SK3399K