2SK3821B
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3821B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 40
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.6
V
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033
Ohm
Paquete / Cubierta:
TO263
- Selección de transistores por parámetros
2SK3821B
Datasheet (PDF)
..1. Size:356K inchange semiconductor
2sk3821b.pdf 
isc N-Channel MOSFET Transistor 2SK3821BFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
7.1. Size:40K sanyo
2sk3821.pdf
Ordering number : ENN8058 2SK3821N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3821ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
7.2. Size:282K inchange semiconductor
2sk3821k.pdf
isc N-Channel MOSFET Transistor 2SK3821KFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 33m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.1. Size:45K 1
2sk3822.pdf
Ordering number : ENN8014 2SK3822N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3822ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.2. Size:38K 1
2sk3828.pdf
Ordering number : ENN8245 2SK3828N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3828ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.3. Size:38K 1
2sk3825.pdf
Ordering number : ENN8242 2SK3825N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3825ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.4. Size:38K sanyo
2sk3826.pdf
Ordering number : ENN8243 2SK3826N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3826ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.5. Size:38K sanyo
2sk3827.pdf
Ordering number : ENN8244 2SK3827N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3827ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.6. Size:38K sanyo
2sk3829.pdf
Ordering number : ENN8031 2SK3829N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3829ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.7. Size:53K sanyo
2sk3820.pdf
Ordering number : ENN8147 2SK3820N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3820ApplicationsFeatures Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.8. Size:38K sanyo
2sk3823.pdf
Ordering number : ENN8241 2SK3823N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3823ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.9. Size:38K sanyo
2sk3824.pdf
Ordering number : ENN8230 2SK3824N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3824ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS
8.10. Size:357K inchange semiconductor
2sk3820b.pdf
isc N-Channel MOSFET Transistor 2SK3820BFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.11. Size:60K inchange semiconductor
2sk382.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK382 DESCRIPTION Drain Current ID=2A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS High speed switching. High Cutoff frequency. No secondary breakdown. Suitable for switching regulatorDC-DC converter, RF amplifiersand ultrasonic
8.12. Size:289K inchange semiconductor
2sk3826.pdf
isc N-Channel MOSFET Transistor 2SK3826FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.13. Size:289K inchange semiconductor
2sk3827.pdf
isc N-Channel MOSFET Transistor 2SK3827FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.14. Size:289K inchange semiconductor
2sk3828.pdf
isc N-Channel MOSFET Transistor 2SK3828FEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 26m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.15. Size:273K inchange semiconductor
2sk3829.pdf
isc N-Channel MOSFET Transistor 2SK3829FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.16. Size:357K inchange semiconductor
2sk3822b.pdf
isc N-Channel MOSFET Transistor 2SK3822BFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.17. Size:283K inchange semiconductor
2sk3822k.pdf
isc N-Channel MOSFET Transistor 2SK3822KFEATURESDrain Current : I = 52A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.18. Size:283K inchange semiconductor
2sk3820k.pdf
isc N-Channel MOSFET Transistor 2SK3820KFEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.19. Size:288K inchange semiconductor
2sk3823.pdf
isc N-Channel MOSFET Transistor 2SK3823FEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 27.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.20. Size:289K inchange semiconductor
2sk3825.pdf
isc N-Channel MOSFET Transistor 2SK3825FEATURESDrain Current : I = 74A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
8.21. Size:288K inchange semiconductor
2sk3824.pdf
isc N-Channel MOSFET Transistor 2SK3824FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 15m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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