2SK3847B Datasheet. Equivalente

 ..1. Size:357K  inchange semiconductor
 2sk3847b.pdf

isc N-Channel MOSFET Transistor 2SK3847B FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 7.1. Size:997K  toshiba
 2sk3847.pdf

2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain source ON resistance RDS (ON) = 12 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 to 2.5 V (VDS = 1

 7.2. Size:283K  inchange semiconductor
 2sk3847k.pdf

isc N-Channel MOSFET Transistor 2SK3847K FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:206K  1
 2sk384l 2sk384s.pdf

 8.2. Size:213K  1
 2sk3843.pdf

2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 3.0 V (VDS

 8.3. Size:216K  toshiba
 2sk3842.pdf

2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) =4.6 m (typ.) High forward transfer admittance Yfs = 93 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement model Vth

 8.4. Size:231K  toshiba
 2sk3845.pdf

2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.7 m (typ.) High forward transfer admittance Yfs = 88 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement model Vt

 8.5. Size:228K  toshiba
 2sk3844.pdf

2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.1 m (typ.) High forward transfer admittance Yfs = 63 S (typ.) Low leakage current IDSS = 100 A (max)(VDS = 60 V) Enhancement mode Vth = 2.0

 8.6. Size:182K  toshiba
 2sk3846.pdf

2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 12 m (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 2.5 V (VDS

 8.7. Size:286K  inchange semiconductor
 2sk384s.pdf

isc N-Channel MOSFET Transistor 2SK384S FEATURES Drain Current I = 0.3A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.8. Size:354K  inchange semiconductor
 2sk384l.pdf

isc N-Channel MOSFET Transistor 2SK384L FEATURES Drain Current I = 0.3A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:286K  inchange semiconductor
 2sk3845.pdf

isc N-Channel MOSFET Transistor 2SK3845 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:279K  inchange semiconductor
 2sk3844.pdf

isc N-Channel MOSFET Transistor 2SK3844 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:287K  inchange semiconductor
 2sk3846.pdf

isc N-Channel MOSFET Transistor 2SK3846 FEATURES Drain Current I = 78A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d