2SK3850D Todos los transistores

 

2SK3850D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3850D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 18.5 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

2SK3850D Datasheet (PDF)

 ..1. Size:286K  inchange semiconductor
2sk3850d.pdf pdf_icon

2SK3850D

isc N-Channel MOSFET Transistor 2SK3850DFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 7.1. Size:36K  sanyo
2sk3850.pdf pdf_icon

2SK3850D

Ordering number : ENN8193 2SK3850N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3850ApplicationsFeatures Best suited for motor drive. Low ON-resistance. Low Qg.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 0.7 AD

 7.2. Size:354K  inchange semiconductor
2sk3850i.pdf pdf_icon

2SK3850D

isc N-Channel MOSFET Transistor 2SK3850IFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.1. Size:129K  toshiba
2sk3857tk.pdf pdf_icon

2SK3850D

2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 13Characteristic Symbol Rating Unit2Gate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storag

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History: NTD25P03LRLG | AP09N70P-H | IXTH64N10L2 | TSD5N60M | SW2N70 | IRHMK57260SE | R6520KNZ1

 

 
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