2SK3850D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3850D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 15 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 0.7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Resistencia entre drenaje y fuente RDS(on): 18.5 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET 2SK3850D

2SK3850D Datasheet (PDF)

..1. Size:286K inchange semiconductor
2sk3850d.pdf

isc N-Channel MOSFET Transistor 2SK3850DFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

7.1. Size:36K sanyo
2sk3850.pdf

Ordering number : ENN8193 2SK3850N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3850ApplicationsFeatures Best suited for motor drive. Low ON-resistance. Low Qg.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 0.7 AD

7.2. Size:354K inchange semiconductor
2sk3850i.pdf

isc N-Channel MOSFET Transistor 2SK3850IFEATURESDrain Current : I = 0.7A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 18.5m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

8.1. Size:129K toshiba
2sk3857tk.pdf

2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 13Characteristic Symbol Rating Unit2Gate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Storag

8.2. Size:148K toshiba
2sk3857tv.pdf

2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.20.050.80.05Absolute Maximum Ratings (Ta=25C) 123Characteristic Symbol Rating UnitGate-Drain voltage VGDO -20 VGate Current IG 10 mADrain power dissipation (Ta = 25C) PD 100 mWJunction Temperature Tj 125 C Stora

8.3. Size:41K no
2sk385.pdf

8.4. Size:233K inchange semiconductor
2sk385.pdf

isc N-Channel MOSFET Transistor 2SK385DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage,high speed power Switching.Low leakage Current.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE

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