2SK3340N Datasheet. Equivalente

 ..1. Size:286K  inchange semiconductor
 2sk3340n.pdf

isc N-Channel MOSFET Transistor 2SK3340N FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 7.1. Size:405K  1
 2sk3340-01.pdf

FUJI POWER MOS-FET 2SK3340-01 N-CHANNEL SILICON POWER MOS-FET 11.6 0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratin

 7.2. Size:331K  inchange semiconductor
 2sk3340w.pdf

isc N-Channel MOSFET Transistor 2SK3340W FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:423K  1
 2sk3341-01.pdf

FUJI POWER MOS-FET 2SK3341-01 N-CHANNEL SILICON POWER MOS-FET 11.6 0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwise specified) Item Symbol Ratin

 8.2. Size:125K  toshiba
 2sk3342.pdf

2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3342 Switching Regulator Applications DC-DC Converter, and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth

 8.3. Size:330K  inchange semiconductor
 2sk3341w.pdf

isc N-Channel MOSFET Transistor 2SK3341W FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.4. Size:286K  inchange semiconductor
 2sk3341n.pdf

isc N-Channel MOSFET Transistor 2SK3341N FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno