2SK3403K Datasheet. Equivalente

 ..1. Size:282K  inchange semiconductor
 2sk3403k.pdf

isc N-Channel MOSFET Transistor 2SK3403K FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 7.1. Size:293K  toshiba
 2sk3403.pdf

2SK3403 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3403 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.29 (typ.) High forward transfer admittance Yfs = 5.8 S (typ.) Low leakage current IDSS = 100 A (max) (VDSS = 450 V) Enhancement mode Vth = 3.0 5.0 V (VDS = 10 V, ID = 1 mA) Absolut

 7.2. Size:356K  inchange semiconductor
 2sk3403b.pdf

isc N-Channel MOSFET Transistor 2SK3403B FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 400m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.1. Size:69K  1
 2sk3404 2sk3404-zk 2sk3404-zj.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3404 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3404 TO-220AB designed for low voltage high current applications such as 2SK3404-ZK TO-263(MP-25ZK) DC/DC con

 8.2. Size:192K  toshiba
 2sk3407.pdf

2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3407 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode Vth = 2.4 3.4 V (VDS = 10 V, ID = 1 mA) Absolute

 8.3. Size:230K  renesas
 2sk3402-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:196K  renesas
 2sk3404.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:61K  nec
 2sk3408.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK3408 is a switching device which can be driven +0.1 0.4 0.05 directly by a 4-V power source. 0.16+0.1 0.06 The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications su

 8.6. Size:44K  kexin
 2sk3405.pdf

SMD Type MOSFET MOS Field Effect Transistor 2SK3405 TO-263 Unit mm +0.2 Features 4.57-0.2 +0.1 1.27-0.1 4.5-V drive available Low on-state resistance RDS(on)1 =9.0m MAX. (VGS =10V, ID =24 A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 34 nC TYP. (ID =48 A, VDD = 16V, VGS =10V) +0.1 0.81-0.1 2.54 Built-in gate protection diode 1Gate +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2

 8.7. Size:1682K  kexin
 2sk3402-z.pdf

SMD Type MOSFET N-Channel MOSFET 2SK3402-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 VDS S = 60V ID = 36 A (VGS = 10V) RDS(ON) 15m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 22m (VGS = 4V) Low Ciss Ciss = 3200 pF TYP. + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Drain Drain 3 Sou

 8.8. Size:287K  inchange semiconductor
 2sk3402-z.pdf

isc N-Channel MOSFET Transistor 2SK3402-Z FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.9. Size:288K  inchange semiconductor
 2sk3404.pdf

isc N-Channel MOSFET Transistor 2SK3404 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:354K  inchange semiconductor
 2sk3402.pdf

isc N-Channel MOSFET Transistor 2SK3402 FEATURES Drain Current I = 36A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 15m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.11. Size:357K  inchange semiconductor
 2sk3404-z.pdf

isc N-Channel MOSFET Transistor 2SK3404-Z FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno