2SK3412I Todos los transistores

 ..1. Size:354K  inchange semiconductor
 2sk3412i.pdf

isc N-Channel MOSFET Transistor 2SK3412I FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 7.1. Size:31K  sanyo
 2sk3412.pdf

Ordering number ENN7176 2SK3412 N-Channel Silicon MOSFET 2SK3412 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SK3412] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3412] 6.5 2.3 5.0 0.5

 7.2. Size:286K  inchange semiconductor
 2sk3412d.pdf

isc N-Channel MOSFET Transistor 2SK3412D FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 62m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:250K  toshiba
 2sk3417.pdf

2SK3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3417 Switching Regulator Applications Unit mm Reverse-recovery time trr = 60 ns (typ.) Built-in high-speed flywheel diode Low drain-source ON resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Yfs = 4.0 S (typ.) Low leakage current IDSS = 100 A (m

 8.2. Size:32K  sanyo
 2sk3414ls.pdf

Ordering number ENN7152 2SK3414LS N-Channel Silicon MOSFET 2SK3414LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SK3414LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Condi

 8.3. Size:31K  sanyo
 2sk3411.pdf

Ordering number ENN7175 2SK3411 N-Channel Silicon MOSFET 2SK3411 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SK3411] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3411] 6.5 2.3 5.0 0.5

 8.4. Size:32K  sanyo
 2sk3413ls.pdf

Ordering number ENN7151 2SK3413LS N-Channel Silicon MOSFET 2SK3413LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SK3413LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Condi

 8.5. Size:31K  sanyo
 2sk3415ls.pdf

Ordering number ENN7153 2SK3415LS N-Channel Silicon MOSFET 2SK3415LS DC / DC Converter, Motor Driver Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SK3415LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter

 8.6. Size:117K  renesas
 2sk3418.pdf

2SK3418 Silicon N Channel MOS FET High Speed Power Switching REJ03G0407-0200 (Previous ADE-208-941 (Z)) Rev.2.00 Sep.10.2004 Features Low on-resistance RDS(on) = 4.3 m typ. Capable of 4 V gate drive High speed switching Outline TO-220AB D 1. Gate 2. Drain G (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain t

 8.7. Size:135K  renesas
 rej03g1099 2sk3419ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:130K  renesas
 rej03g0407 2sk3418.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:121K  renesas
 2sk3419.pdf

2SK3419 Silicon N Channel MOS FET High Speed Power Switching REJ03G1099-0200 (Previous ADE-208-942) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 4.3 m typ. 4 V gate drive device High speed switching Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 S 3 Rev.2.00 Sep 07,

 8.10. Size:279K  inchange semiconductor
 2sk3414ls.pdf

isc N-Channel MOSFET Transistor 2SK3414LS FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 26m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.11. Size:356K  inchange semiconductor
 2sk3417b.pdf

isc N-Channel MOSFET Transistor 2SK3417B FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.12. Size:279K  inchange semiconductor
 2sk3413ls.pdf

isc N-Channel MOSFET Transistor 2SK3413LS FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 33m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.13. Size:282K  inchange semiconductor
 2sk3417k.pdf

isc N-Channel MOSFET Transistor 2SK3417K FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.14. Size:279K  inchange semiconductor
 2sk3415ls.pdf

isc N-Channel MOSFET Transistor 2SK3415LS FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno