2SK4063LS Todos los transistores

 

2SK4063LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK4063LS
   Código: K4063
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 3 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET 2SK4063LS

 

2SK4063LS Datasheet (PDF)

 ..1. Size:56K  1
2sk4063ls.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0397E 2SK4063LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4063LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta

 ..2. Size:280K  inchange semiconductor
2sk4063ls.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4063LSFEATURESDrain Current : I =16A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.39(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.1. Size:56K  1
2sk4062ls.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0396E 2SK4062LSN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4062LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta

 8.2. Size:53K  1
2sk4064ls.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0312D 2SK4064LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4064LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specificatio

 8.3. Size:524K  1
2sk4068-01.pdf

2SK4063LS
2SK4063LS

http://www.fujielectric.co.jp/products/semiconductor/index.html 2SK4068-01 Automotive FUJI POWER MOSFET Trench Power MOSFET (2nd Gen.) series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance Low switching loss Drain (D) 100% avalanche tested Gate (G) Applications Source (S) Automotiv

 8.4. Size:49K  1
2sk4067.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0565 2SK4067SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4067ApplicationsFeatures Motor drive applications. 4.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) I

 8.5. Size:264K  sanyo
2sk4065-dl-1e.pdf

2SK4063LS
2SK4063LS

2SK4065Ordering number : ENA0324ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4065ApplicationsFeatures ON-resistance RDS(on)1=4.6m (typ.) Input capacitance Ciss=12200pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75

 8.6. Size:377K  sanyo
2sk4066.pdf

2SK4063LS
2SK4063LS

2SK4066Ordering number : ENA0225BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60

 8.7. Size:258K  sanyo
2sk4065.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0324 2SK4065SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4065ApplicationsFeatures Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGate

 8.8. Size:52K  sanyo
2sk4066-dl-e.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0225A 2SK4066SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4066ApplicationsFeatures Low ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-

 8.9. Size:294K  renesas
2sk4069-s27-zk.pdf

2SK4063LS
2SK4063LS

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:285K  onsemi
2sk4066-1e 2sk4066-dl-1e.pdf

2SK4063LS
2SK4063LS

Ordering number : ENA0225C2SK4066N-Channel Power MOSFEThttp://onsemi.com60V, 100A, 4.7m , TO-262-3L/TO-263-2LFeatures ON-resistance RDS(on)1=3.6m (typ.) Input capacitance Ciss=12500pF (typ.) 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS

 8.11. Size:283K  inchange semiconductor
2sk4065k.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4065KFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.12. Size:357K  inchange semiconductor
2sk4065b.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4065BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.13. Size:279K  inchange semiconductor
2sk4062ls.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4062LSFEATURESDrain Current : I =18A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.32(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.14. Size:279K  inchange semiconductor
2sk4064ls.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4064LSFEATURESDrain Current : I =14A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max) @ V = 15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.15. Size:283K  inchange semiconductor
2sk4067i.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4067IFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

 8.16. Size:357K  inchange semiconductor
2sk4066b.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4066BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.17. Size:331K  inchange semiconductor
2sk4068-01.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4068-01FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

 8.18. Size:283K  inchange semiconductor
2sk4066k.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4066KFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.19. Size:287K  inchange semiconductor
2sk4067d.pdf

2SK4063LS
2SK4063LS

isc N-Channel MOSFET Transistor 2SK4067DFEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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