2SK4065K Todos los transistores

 

2SK4065K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK4065K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 90 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.6 V
   Resistencia entre drenaje y fuente RDS(on): 0.006 Ohm
   Paquete / Cubierta: TO262

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2SK4065K Datasheet (PDF)

 ..1. Size:283K  inchange semiconductor
2sk4065k.pdf

2SK4065K
2SK4065K

isc N-Channel MOSFET Transistor 2SK4065KFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 7.1. Size:264K  sanyo
2sk4065-dl-1e.pdf

2SK4065K
2SK4065K

2SK4065Ordering number : ENA0324ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4065ApplicationsFeatures ON-resistance RDS(on)1=4.6m (typ.) Input capacitance Ciss=12200pF (typ.) 4V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75

 7.2. Size:258K  sanyo
2sk4065.pdf

2SK4065K
2SK4065K

Ordering number : ENA0324 2SK4065SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4065ApplicationsFeatures Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGate

 7.3. Size:357K  inchange semiconductor
2sk4065b.pdf

2SK4065K
2SK4065K

isc N-Channel MOSFET Transistor 2SK4065BFEATURESDrain Current : I =100A@ T =25D CDrain Source Voltage: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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