2SK4070I Todos los transistores

 ..1. Size:354K  inchange semiconductor
 2sk4070i.pdf

isc N-Channel MOSFET Transistor 2SK4070I FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 7.1. Size:266K  renesas
 2sk4070.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:286K  inchange semiconductor
 2sk4070d.pdf

isc N-Channel MOSFET Transistor 2SK4070D FEATURES Drain Current I = 1.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.1. Size:56K  1
 2sk4074ls.pdf

Ordering number ENA1203 2SK4074LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4074LS Applications Features Ultralow ON-resistance. Motor drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 75 V Gate-to-Source V

 8.2. Size:40K  sanyo
 2sk4073ls.pdf

Ordering number ENA0500 2SK4073LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4073LS Applications Features Ultralow ON-resistance. Load switching applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V

 8.3. Size:165K  renesas
 2sk4079.pdf

Preliminary Data Sheet R07DS0269EJ0100 QN7002 Rev.1.00 Mar 11, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10 V,

 8.4. Size:267K  renesas
 2sk4077-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:283K  renesas
 2sk4075b-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:276K  renesas
 2sk4078-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:254K  renesas
 2sk4079a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:235K  renesas
 2sk4076-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:289K  renesas
 2sk4078b-zk.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:162K  nec
 2sk4075.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn (Tin) Tape TO-252 (MP-3ZK) 2500 p/reel typ. 0.27 g 2SK4075-ZK-E2-AY FEATURES (TO-252) Low on-state resis

 8.11. Size:162K  nec
 2sk4075-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING PACKAGE 2SK4075-ZK-E1-AY Pure Sn (Tin) Tape TO-252 (MP-3ZK) 2500 p/reel typ. 0.27 g 2SK4075-ZK-E2-AY FEATURES (TO-252) Low on-state resis

 8.12. Size:286K  inchange semiconductor
 2sk4076.pdf

isc N-Channel MOSFET Transistor 2SK4076 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:287K  inchange semiconductor
 2sk4075b.pdf

isc N-Channel MOSFET Transistor 2SK4075B FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 7.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.14. Size:280K  inchange semiconductor
 2sk4073ls.pdf

isc N-Channel MOSFET Transistor 2SK4073LS FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.15. Size:287K  inchange semiconductor
 2sk4078-zk.pdf

isc N-Channel MOSFET Transistor 2SK4078-ZK FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 8.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.16. Size:279K  inchange semiconductor
 2sk4074ls.pdf

isc N-Channel MOSFET Transistor 2SK4074LS FEATURES Drain Current I = 76A@ T =25 D C Drain Source Voltage V = 75V(Min) DSS Static Drain-Source On-Resistance R = 6.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen