15N10-TO251 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

15N10 TO251www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

MEE15N10-G N-Channel 100-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE15N10-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology is esp

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 54 ANTMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET12.2 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC100 V 54 A18.3 mW @ 4.5 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTE215N10E/DDesigner's Data SheetMTE215N10EISOTOP TMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FET215 AMPERESThis advanced high voltage TMOS EFET is designed to100 VOLTSwithstand high energy in the avalanche mode and switch e

STH315N10F7-2, STH315N10F7-6Automotive-grade N-channel 100 V, 2.1 m typ., 180 A STripFET F7 Power MOSFETsDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codesTAB TABSTH315N10F7-2100 V 2.3 m 180 ASTH315N10F7-6273 Designed for automotive applications and 11AEC-Q101 qualified2 2H PAK-6H PAK-2 Among the lowest RDS(on) on the marke

STP315N10F7Automotive-grade N-channel 100 V, 2.3 m typ., 180 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesVDS RDS(on) max. IDOrder codeTABSTP315N10F7 100 V 2.7 m 180 A Designed for automotive applications and AEC-Q101 qualified32 Among the lowest RDS(on) on the market1 Excellent figure of merit (FoM)TO-220

RTP315N10F7Aerospace and defense N-channel 100 V, 2.3 m typ., 180 A STripFET F7 Power MOSFET in a TO-220 packageDatasheet - target specificationFeaturesVDS RDS(on) max. IDOrder codeTABRTP315N10F7 100 V 2.7 m 180 A Intended for use in aerospace and defense applications32 Dedicated traceability and part marking 1 Production parts approval documents av

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VIPT015N10N5HSOF1 DescriptionFeaturesTab Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

VCES =1000 VIXGA 15N100CIGBTIC25 = 30 AIXGP 15N100CVCE(sat) = 3.5 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA (IXGA)

VCES =1000 VIXGA 15N100CIGBTIC25 = 30 AIXGP 15N100CVCE(sat) = 3.5 VLightspeed Seriestfi(typ) = 115 nsSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C30 AIC90 TC = 90C15 AICM TC = 25C, 1 ms 60 ATO-263 AA (IXGA)

VDSS ID25 RDS(on)HiPerFETTMIXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 WPower MOSFETsIXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 Wtrr 200 nsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyPreliminary data sheetTO-247 ADSymbol Test Conditions Maximum Ratings(IXFH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 MW 1000 V(TAB)VGS Continuous

MCQ15N10YFeatures Split Gate Trench MOSFET Technology Low Gate Charge Halogen Free Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C

MCQ15N10BFeatures Low RDS(on) and FOMN-Channel Extremely Low Switching Loss Excellent Stability and Uniformity Fast Switching and Soft RecoveryEnhancement Mode Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Field Effect Transistor Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 47.1 ANVMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFWS015N10MCL - Wettable Flank Option for Enhanced12.2 mW @ 10 VOptical Inspection100 V 47.1 A18.3 mW @

MOSFET - Power, SingleN-Channel100 V, 12.2 mW, 54 ANTMFS015N10MCLFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Primary DC-DC MOSFET12.2 mW @ 10 V Synchronous Rectifier in DC-DC and AC-DC100 V 54 A18.3 mW @ 4.5 V

UNISONIC TECHNOLOGIES CO., LTD 15N10 Power MOSFET 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N10 is an N-Channel enhancement MOSFET, it uses UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC 15N10 is suitable for high efficiency switching DC/DC converter, LCD display in

SSD15N10 15A, 100V, RDS(ON) 110m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The

GOFORDG15N10CGeneral Description The G15N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for power switching application and LED backlighting. Features RDS(ON) VDSS ID @10V (typ) Schematic Diagram 100V 15A 70m Ultra Low On-Resistance High UIS and UIS 100% Test Applic

GOFORD GT15N10SN-Channel Enhancement Mode Power MOSFETDescriptionThe GT15N10S uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 10A RDS(ON) (at VGS = 10V)

BRD15N10 Rev.F Oct.-2018 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

SEMICONDUCTORFTK15N10DTECHNICAL DATAFTK15N10D N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK15N10D provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30

SMD Type MOSFETN-Channel MOSFETNDT15N10TO-252Unit: mm+0.156.50-0.15+0.1 Features2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 RDS(ON) = 80m @VGS = 10V,ID=8A Low gate charge (Typ=24nC) Low CRSS (Typ=23pF)0.127+0.1 High switching speed0.80-0.1max+ 0.12.3 0.60- 0.11. Gate+0.154 .60 -0.152. DrainSource3. Absolute Maximum Ratin

5

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

SL15N10AN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 100V DSI 15A DR ( at V = 10V) 115mohm DS(ON) GSR ( at V = 4.5V) 1 0mohm DS(ON) GS 100% UIS Tested 100% VDS TestedGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low RDS(ON)Ap

RUMW UMW 15N10UMW 15N10UMW 15N10=20AUMW 15N10 UMW 15N1020www.umw-ic.com 1RUMW UMW 15N10UMW 15N1020www.umw-ic.com 2RUMW UMW 15N10UMW 15N10www.umw-ic.com 3RUMW UMW 15N10UMW 15N10www.umw-ic.com 4RUMW UMW 15N10UMW 15N10www.umw-ic.com

WMO15N10T1 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMO15N10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. SGFeatures TO-252 V = 100V, I = 14.6A DS DR

AP15N10DATA SHEETDATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

FIR15N10LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252General DescriptionThe FIR15N10LG is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as c

PTD15N10 100V/15A N-Channel Advanced Power MOSFETFeatures V DS 100 V N-Channel5V Logic Level Control R DS(on),typ@VGS=10V 78 m Enhancement mode R DS(on),typ@VGS=4.5V 82 m Very low on-resistance @ VGS=4.5 V I D 15 A Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant To-252Maximum ratings, at T j=25 C, unless otherw

TX15N10BN channel 100V MOSFETDescription FeaturesThe TX15N10B is the N-Channel logic enhancementVDS 100Vmode power field effect transistorsare produced using high cellRDS(on)Max. 100mdensity, DMOS trench technology.This high density processID 15Aisespecially tailored to minimize on-state resistance.Thesedevices are particularly suited for lowvoltage application such Sup

HGT015N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability1.3RDS(on),typ mW Enhanced Avalanche Ruggedness446 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested360 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High S

Shenzhen Tuofeng Semiconductor Technology Co., LtdN -CHANNEL ENHANCEMENT MODE POWER MOSFET15N10BDescription TO-252 The 15N10B TO-252 uses advanced trench technology and Ddesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. S GGeneral Features Equivalent CircuitRDS(ON) DVDSS ID @10V (typ) G100V 10A 104

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDN -CHANNEL ENHANCEMENT MODE POWER MOSFET15N10N-Channel Enhancement Mode Power MOSFET TO-252 Description The 15N10 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a SBattery protection or in other switching app

WSF15N10G N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10G uses advanced SGTMOS BVDSS RDSON ID technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche 75m 15A100Vcharacteristics. This device is specially designed to get better ruggedness and suitable to use in Applications Synchronous rectification applications Fast Swi

WSF15N10A N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10A uses advanced trench technology and BVDSS RDSON ID design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. 100V 90m 15AFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and currentTO-252 Pin Configu

WSC15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSC15N10 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 80m 15Agate charge for most of the synchronous buck converter applications . Applications The WSC15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

WSF15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 80m 15Afor most of the synchronous buck converter applications . Applications The WSF15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

VBZE15N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100at VGS = 10 V0.097 16 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

VBZFB15N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESVVDS 100 DT-Trench Power MOSFET 175 C Junction TemperatureRDS(on),typ VGS=10V m115 100 % Rg TestedRDS(on),typ VGS=4.5V m12015 AID APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Param

ME15N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

RoHS COMPLIANT YJD15N10A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 100V DS I 15A D R ( at V =10V) 110 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GS 100% UIS Tested 100% VDS Tested General Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density ce

TSB15N10A Wuxi Unigroup Microelectronics Company 100V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa

TSP15N10A Wuxi Unigroup Microelectronics Co.,Ltd. 100V N-Channel DTMOS General Description Product Summary Trench Power SGT technology VDS 100V Very low on-resistance RDS(ON) ID (at VGS=10V) 150A Low Gate Charge Excellent Gate Charge x RDS(ON) Product RDS(ON) (at VGS=10V)

HM15N10D N-Channel Enhancement Mode Power MOSFET Description The HM15N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =15A RDS(ON)

HM15N10KN-Channel Enhancement Mode Power MOSFET Description The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

15N10 SeriesN-Channel MOSFET15A, 100V, N H FQU15N10C H15N10U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI15N10FQD15N10C H15N10D D: TO-252 25Kpcs 2.5K/ 5Kpcs/15N10 Series Pin Assignment3-Lead Plastic TO-2

isc N-Channel MOSFET Transistor STP315N10F7FEATURESDrain Current : I = 180A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 2.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s