20N06L-TO252 Todos los transistores

 ..1. Size:770K  cn vbsemi
 20n06l-to252.pdf

20N06L TO252 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 8.1. Size:673K  fairchild semi
 fqp20n06l.pdf

May 2001 TM QFET FQP20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tail

 8.2. Size:664K  fairchild semi
 fqd20n06l fqu20n06l.pdf

May 2001 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es

 8.3. Size:681K  fairchild semi
 fqb20n06ltm.pdf

May 2001 TM QFET FQB20N06L / FQI20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been esp

 8.4. Size:855K  fairchild semi
 fqd20n06l.pdf

Mar 2009 TM QFET FQD20N06L / FQU20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es

 8.5. Size:661K  fairchild semi
 fqpf20n06l.pdf

May 2001 TM QFET FQPF20N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.7A, 60V, RDS(on) = 0.055 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.5 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially t

 8.6. Size:220K  fairchild semi
 fdpf320n06l.pdf

December 2010 FDPF320N06L N-Channel PowerTrench MOSFET 60V, 21A, 25m Features Description RDS(on) = 20m ( Typ.)@ VGS = 10V, ID = 21A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been RDS(on) = 23m ( Typ.)@ VGS = 5V, ID = 17A especially tailored to minimize the on-state resistance and yet maintain superior sw

 8.7. Size:448K  infineon
 ipd220n06l3 ipd220n06l3g.pdf

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 8.8. Size:786K  onsemi
 fqp20n06l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.9. Size:89K  onsemi
 ntd20n06l ntdv20n06l.pdf

NTD20N06L, NTDV20N06L Power MOSFET 20 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in www.onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Compli

 8.10. Size:117K  onsemi
 ntd20n06lg.pdf

NTD20N06L, NTDV20N06L Power MOSFET 20 Amps, 60 Volts Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V (Note 1) AEC Q101 Qualified - NTDV20N06L These Devices are Pb-Free and are RoHS C

 8.11. Size:82K  onsemi
 ntd20n06l.pdf

 8.12. Size:1051K  onsemi
 fqu20n06l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.13. Size:700K  onsemi
 fdpf320n06l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.14. Size:118K  onsemi
 ntdv20n06l.pdf

NTD20N06L, NTDV20N06L Power MOSFET 20 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. V(BR)DSS RDS(on) TYP ID MAX Features 20 A 60 V 39 mW@5.0 V AEC Q101 Qualified - NTDV20N06L (Note 1) These Devices are Pb-Free and are RoHS Com

 8.15. Size:468K  crhj
 crte120n06l.pdf

CRTE120N06L ( ) Trench N-MOSFET 60V, 8.5m , 16A Features Product Summary VDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID 16A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Aval

 8.16. Size:3843K  first semi
 fir20n06lg.pdf

FIR20N06LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description TheFIR20N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 8.17. Size:1135K  cn vbsemi
 fqp20n06l.pdf

FQP20N06L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.024 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

 8.18. Size:808K  cn vbsemi
 cmd20n06l.pdf

CMD20N06L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 8.19. Size:771K  cn vbsemi
 ntd20n06lt4g.pdf

NTD20N06LT4G www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 8.20. Size:772K  cn vbsemi
 fqd20n06le.pdf

FQD20N06LE www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 8.21. Size:258K  inchange semiconductor
 fqp20n06l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQP20N06L DESCRIPTION Drain Current I =21A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) DS(on) 100% Avalanche Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Swi

 8.22. Size:242K  inchange semiconductor
 ipd220n06l3.pdf

isc N-Channel MOSFET Transistor IPD220N06L3,IIPD220N06L3 FEATURES Static drain-source on-resistance RDS(on) 22m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60