STU609S Todos los transistores

 

STU609S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STU609S

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 42 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 107 nC

Conductancia de drenaje-sustrato (Cd): 144 pF

Resistencia drenaje-fuente RDS(on): 0.053 Ohm

Empaquetado / Estuche: TO252, DPAK

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STU609S Datasheet (PDF)

1.1. stu609s std609s.pdf Size:98K _samhop

STU609S
STU609S

Gr P Pr P P STU/D609S a S mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 53 @ VGS=-10V TO-252 and TO-251 Package. -60V -20A 80 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO -

5.1. stu60n3lh5-s.pdf Size:747K _upd

STU609S
STU609S

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET™ V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 Ω 48 A 2 1 3 STP60N3LH5 30 V 0.0084 Ω 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5-S 30 V 0.0084 Ω 48 A ■ RDS(on) * Qg industry benchmark 3 2 ■ Extr

5.2. std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s.pdf Size:747K _st

STU609S
STU609S

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 ? 48 A 2 1 3 STP60N3LH5 30 V 0.0084 ? 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 ? 48 A STU60N3LH5-S 30 V 0.0084 ? 48 A RDS(on) * Qg industry benchmark 3 2 Extremely low on-r

 5.3. std60n3lh5 stp60n3lh5 stu60n3lh5.pdf Size:386K _st

STU609S
STU609S

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 ?, 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 ? 48 A 3 2 STP60N3LH5 30 V 0.0084 ? 48 A 1 STU60N3LH5 30 V 0.0084 ? 48 A TO-220 RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 3 2 1 1 Very low switching gate charge High avalanche ru

5.4. stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf Size:624K _st

STU609S
STU609S

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m?, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V <8.5m? 80A 110W 2 1 DPAK IPAK STD60N55F3 55V <8.5m? 80A 110W TO-220FP STF60N55F3 55V <8.5m? 42A 30W STI60N55F3 55V <8.5m? 80A 110W STP60N55F3 55V <8.5

 5.5. stu602s std602s.pdf Size:120K _samhop

STU609S
STU609S

Green Product STU/D602S SamHop Microelectronics Corp. Aug 26,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m Ω ) Max Rugged and reliable. 30 @ VGS = 10V 22A 60V TO-252 and TO-251 Package. 38@VGS = 4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S

5.6. stu6025nl std6025nl.pdf Size:110K _samhop

STU609S
STU609S

Green Product STU/D6025NL SamHop Microelectronics Corp. Feb 25,2006 Ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m Ω ) Typ Rugged and reliable. 5.5 @ VGS = 10V 30V 60A TO-252 and TO-251 Package. 8 @ VGS = 4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-P

5.7. stu601s.pdf Size:97K _samhop

STU609S
STU609S

r P Pr P P STU601S a S mHop Microelectronics C orp. Ver 2.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 95 @ VGS=-10V Suface Mount Package. -60V -15A 125 @ VGS=-4.5V ESD Protected. G G S S STU SERIES ( ) TO - 252AA D- PAK (TC=25°C u

5.8. stu600s.pdf Size:763K _samhop

STU609S
STU609S

Green Product STU/D600S SamHop Microelectronics Corp. Aug 25,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m W ) Max Rugged and reliable. 55 @ VGS = 10V 16A 60V TO-252 and TO-251 Package. 70 @ VGS = 4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABSOL

5.9. stu6025nl2 std6025nl2.pdf Size:122K _samhop

STU609S
STU609S

Green Product STU/D6025NL2 a S mHop Microelectronics C orp. Ver 2.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 6.5 @ VGS=10V Suface Mount Package. 30V 60A 9.5 @ VGS=4.5V G G S S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) (TA=25

5.10. stu608s std608s.pdf Size:96K _samhop

STU609S
STU609S

STU/D608S SamHop Microelectronics Corp. Feb. 06 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m Ω ) Max Rugged and reliable. 55 @ VGS = 10V TO-252 and TO-251 Package. 60V 16A 65@VGS = 4.5V ESD Protected. D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABSOLU

5.11. stu606s.pdf Size:143K _samhop

STU609S
STU609S

Green Product STU/D606S a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 56 @ VGS=10V Suface Mount Package. 60V 21A 68 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A

Otros transistores... STU618S , FCI7N60 , STU616S , FCP11N60F , STU612D , FCP11N60N , STU610S , FCP13N60N , IRFZ24N , FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60N_F102 , STU602S , FCP36N60N , STU6025NL2 .

 

 
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