STU609S Todos los transistores

Gr P Pr P P STU/D609S a S mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 53 @ VGS=-10V TO-252 and TO-251 Package. -60V -20A 80 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO -

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 48 A 2 1 3 STP60N3LH5 30 V 0.0084 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 48 A STU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark 3 2 Extr

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 48 A 3 2 STP60N3LH5 30 V 0.0084 48 A 1 STU60N3LH5 30 V 0.0084 48 A TO-220 RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 3 2 1 1 Very low switching gate charge

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m , 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V

Green Product STU/D602S SamHop Microelectronics Corp. Aug 26,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Max Rugged and reliable. 30 @ VGS = 10V 22A 60V TO-252 and TO-251 Package. 38@VGS = 4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S

Green Product STU/D600S SamHop Microelectronics Corp. Aug 25,2006 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m W ) Max Rugged and reliable. 55 @ VGS = 10V 16A 60V TO-252 and TO-251 Package. 70 @ VGS = 4.5V D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABSOL

Green Product STU/D606S a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 56 @ VGS=10V Suface Mount Package. 60V 21A 68 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I - PAK A

r P Pr P P STU601S a S mHop Microelectronics C orp. Ver 2.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 95 @ VGS=-10V Suface Mount Package. -60V -15A 125 @ VGS=-4.5V ESD Protected. G G S S STU SERIES ( ) TO - 252AA D- PAK (TC=25 C u

Green Product STU/D6025NL SamHop Microelectronics Corp. Feb 25,2006 Ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY FEATURES Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Typ Rugged and reliable. 5.5 @ VGS = 10V 30V 60A TO-252 and TO-251 Package. 8 @ VGS = 4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-P

STU/D608S SamHop Microelectronics Corp. Feb. 06 2007 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( m ) Max Rugged and reliable. 55 @ VGS = 10V TO-252 and TO-251 Package. 60V 16A 65@VGS = 4.5V ESD Protected. D D G S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-PAK) S ABSOLU