30N06-TO252 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 30N06-TO252
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 100 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 35 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 11 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 140 pF
Resistencia entre drenaje y fuente RDS(on): 0.031 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET 30N06-TO252
30N06-TO252 Datasheet (PDF)
30n06-to252.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
30N06 TO252www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
30n06-to220.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
30N06 TO220www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D
ssd30n06-39d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are
am30n06-39ie.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Analog Power AM30N06-39IEN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30converters and power management in portable and 6050 @ VGS = 4.5V 26batt
am30n06-65da.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Analog Power AM30N06-65DAN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)65 @ VGS = 10V23 Low thermal impedance 6078 @ VGS = 4.5V21 Fast switching speed Typical Applications: Automotive Systems DC/DC Conversion Circuits Battery Powered Power Tools ABSOLUTE MAXIMUM RATINGS
am30n06-39d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Analog Power AM30N06-39DN-Channel 60-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 38 @ VGS = 10V 30converters and power management in portable and 6050 @ VGS = 4.5V 26batte
am30n06-39d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AM30N06-39Dwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .