AFP2307AS23 Todos los transistores

 

AFP2307AS23 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP2307AS23

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 typ Ohm

Encapsulados: SOT23

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AFP2307AS23 datasheet

 ..1. Size:849K  cn vbsemi
 afp2307as23.pdf pdf_icon

AFP2307AS23

AFP2307AS23 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 6.1. Size:709K  alfa-mos
 afp2307a.pdf pdf_icon

AFP2307AS23

AFP2307A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2307A, P-Channel enhancement mode -20V/-1.2A, RDS(ON)= 520 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-1.0A, RDS(ON)= 870 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are par

 8.1. Size:696K  alfa-mos
 afp2303a.pdf pdf_icon

AFP2307AS23

AFP2303A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2303A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=145m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=180m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 8.2. Size:519K  alfa-mos
 afp2301s.pdf pdf_icon

AFP2307AS23

AFP2301S Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.0A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

MOSTRAR MÁS

Otros transistores... 30N20 , 30P06 , 70N06L-TQ2 , 80N10 , AF2301PWL , AF4502CSLA , AFN3404S23RG , AFN4172WSS8 , AO4407 , AM20P06-135 , AM2319P-T1 , AM2336N-T1 , AM2339P-T1 , AM2340NE-T1 , AM2358N-T1 , AM3401E3VR , AM4392N-T1 .

History: CS2N70A3R1-G | S10H18RP

 

 

 

 

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