AM2358N-T1 Todos los transistores

 

AM2358N-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM2358N-T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.09 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: SOT23
 

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AM2358N-T1 Datasheet (PDF)

 ..1. Size:1271K  cn vbsemi
 am2358n-t1.pdf pdf_icon

AM2358N-T1

AM2358N-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G

 7.1. Size:288K  analog power
 am2358n.pdf pdf_icon

AM2358N-T1

Analog Power AM2358NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 60107 @ VGS = 4.5V2.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 7.2. Size:165K  analog power
 am2358ne.pdf pdf_icon

AM2358N-T1

Analog Power AM2358NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1battery-powered products suc

 7.3. Size:2357K  cn vbsemi
 am2358ne.pdf pdf_icon

AM2358N-T1

AM2358NEwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

MOSTRAR MÁS

Otros transistores... AFN3404S23RG , AFN4172WSS8 , AFP2307AS23 , AM20P06-135 , AM2319P-T1 , AM2336N-T1 , AM2339P-T1 , AM2340NE-T1 , STP80NF70 , AM3401E3VR , AM4392N-T1 , AM4929P-T1 , AM4930N-T1 , AM60N10-70PC , AO2301 , AO4602 , AO4606A .

History: HGN035N10AL | STD7N80K5

 

 
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