AP9579GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP9579GM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SO8

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AP9579GM Datasheet (PDF)

..1. Size:797K cn vbsemi
ap9579gm.pdf

AP9579GMwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.0195 at VGS = - 10 V - 10APPLICATIONS- 60 76 nC0.0250 at VGS = - 4.5 V - 9 Load SwitchSSO-8SD1 8GSD2 7SD3 6GD4 5DTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, un

0.1. Size:59K ape
ap9579gm-hf.pdf

AP9579GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VDDD Lower Gate Charge RDS(ON) 25mD Fast Switching Characteristic ID -7.3AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

7.1. Size:95K ape
ap9579gp-hf.pdf

AP9579GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,r

7.2. Size:93K ape
ap9579gj-hf.pdf

AP9579GJ-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

7.3. Size:94K ape
ap9579gs-hf.pdf

AP9579GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G

7.4. Size:94K ape
ap9579gi-hf.pdf

AP9579GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -26.8AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

7.5. Size:194K ape
ap9579gj.pdf

AP9579GJ-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS Compliant ProductSDescriptionAP9579 series are from Advanced Power innovated design and siliconprocess technology to achieve the

7.6. Size:95K ape
ap9579gh-hf.pdf

AP9579GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 25m Fast Switching Characteristic ID -45AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

7.7. Size:1584K ape
ap9579gp.pdf

Address: 12F-1&2, No.5, Taiyuan 1 ST., Zhubei City, Hsinchu County 30265, Taiwan, R.O.C.Tel:886-3-6215899 Fax:886-3-6215999 ADVANCED POWER ELECTRONICS CORP. E-mail:mail@a-power.com.tw Specification Sheet CustomerCustomer Part Number AP9579GP APEC Part Number AP9579GP Issued Date 2020/06/02SPEC No. SPEC-202006-0001 A

7.8. Size:877K cn vbsemi
ap9579gp.pdf

AP9579GPwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.019 at VGS = - 10 V - 53APPLICATIONS- 60 38 nC0.026 at VGS = - 4.5 V - 42 Load SwitchTO-220ABSGDG D SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Par

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