APM1110NUC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM1110NUC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.114(typ) Ohm
   Paquete / Cubierta: TO252

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APM1110NUC Datasheet (PDF)

..1. Size:857K cn vbsemi
apm1110nuc.pdf

APM1110NUCwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

5.1. Size:815K sino
apm1110nu apm1110nub.pdf

APM1110NU/APM1110NUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/10A,D RDS(ON)= 175m (max.) @ VGS=10VS RDS(ON)= 235m (max.) @ VGS=4.5VSDG ESD Protected G Reliable and RuggedTop View of TO-251Top View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in TV Inverter.SN-Chan

7.1. Size:545K sino
apm1110k.pdf

APM1110K N-Channel Enhancement Mode MOSFETFeatures Pin ConfigurationDDD 100V/2.7A,DRDS(ON)=140m (typ.) @ VGS=10VRDS(ON)=185m (typ.) @ VGS=4.5VSS ESD Protected SG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available(8, 7, 6, 5)D D D D(RoHS Compliant)Applications(4) G Power Management in TV Inverter.S S S(1, 2, 3)N-Ch

9.1. Size:586K sino
apm1106k.pdf

APM1106K Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2D2100V/2A,RDS(ON) = 220m (max.) @ VGS = 10VS1RDS(ON) = 310m (max.) @ VGS = 4VG1S2 P-ChannelG2-100V/-2A,Top View of SOP-8RDS(ON) = 225m (max.) @ VGS = -10VRDS(ON) = 315m (max.) @ VGS = -4V(8) (7) (6) (5)D1 D1 D2 D2 Super High Dense Cell Design

9.2. Size:551K sino
apm1105nu.pdf

APM1105NUN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 100V/16A,RDS(ON)= 100m (max.) @ VGS=10VSRDS(ON)= 170m (max.) @ VGS=4.5VG ESD ProtectedTop View of TO-252-3 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking Information

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AO5800E | AO4932

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