APM1110NUC Todos los transistores

 ..1. Size:857K  cn vbsemi
 apm1110nuc.pdf

APM1110NUC www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN

 5.1. Size:815K  sino
 apm1110nu apm1110nub.pdf

APM1110NU/APM1110NUB N-Channel Enhancement Mode MOSFET Features Pin Description 100V/10A, D RDS(ON)= 175m (max.) @ VGS=10V S RDS(ON)= 235m (max.) @ VGS=4.5V S D G ESD Protected G Reliable and Rugged Top View of TO-251 Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in TV Inverter. S N-Chan

 7.1. Size:545K  sino
 apm1110k.pdf

APM1110K N-Channel Enhancement Mode MOSFET Features Pin Configuration D D D 100V/2.7A, D RDS(ON)=140m (typ.) @ VGS=10V RDS(ON)=185m (typ.) @ VGS=4.5V S S ESD Protected S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available (8, 7, 6, 5) D D D D (RoHS Compliant) Applications (4) G Power Management in TV Inverter. S S S (1, 2, 3) N-Ch

 9.1. Size:586K  sino
 apm1106k.pdf

APM1106K Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 D2 100V/2A, RDS(ON) = 220m (max.) @ VGS = 10V S1 RDS(ON) = 310m (max.) @ VGS = 4V G1 S2 P-Channel G2 -100V/-2A, Top View of SOP-8 RDS(ON) = 225m (max.) @ VGS = -10V RDS(ON) = 315m (max.) @ VGS = -4V (8) (7) (6) (5) D1 D1 D2 D2 Super High Dense Cell Design

 9.2. Size:551K  sino
 apm1105nu.pdf

APM1105NU N-Channel Enhancement Mode MOSFET Features Pin Description D 100V/16A, RDS(ON)= 100m (max.) @ VGS=10V S RDS(ON)= 170m (max.) @ VGS=4.5V G ESD Protected Top View of TO-252-3 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information